SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5612A
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
100
5
5
25
150
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2N5612A
SYMBOL
TYP.
MAX
UNIT
V
CEO(SUS)
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
h
FE
f
T
Collector-emitter sustaining voltage
I
C
=50mA ;I
B
=0
I
C
=1A; I
B
=0.1A
I
C
=2.5A ; V
CE
=5V
V
CB
=Rated V
CBO
; I
E
=0
V
CE
= Rated V
CEO
,I
B
=0
V
EB
=5V; I
C
=0
I
C
=2.5A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V
100
V
Collector-emitter saturation voltage
0.5
V
Base-emitter on voltage
1.5
V
Collector cut-off current
0.1
mA
Collector cut-off current
1.0
mA
Emitter cut-off current
0.1
mA
DC current gain
30
150
Transition frequency
60
MHz
2
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