EEWORLDEEWORLDEEWORLD

Part Number

Search

TC58FVT321XB-10

Description
toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory
Categorystorage    storage   
File Size549KB,48 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

TC58FVT321XB-10 Overview

toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory

TC58FVT321XB-10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instruction7 X 10 MM, 0.80 MM PITCH, TFBGA-56
Contacts56
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time100 ns
Spare memory width8
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B56
length10 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals56
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA56,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.00001 A
Maximum slew rate0.045 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width7 mm
Base Number Matches1
TC58FVT321/B321FT/XB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32-MBIT (4M
×
8 BITS / 2M
×
16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory
organized as 4,194,304 words
×
8 bits or as 2,097,152 words
×
16 bits. The TC58FVT321/B321 features commands
for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on
the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES
Power supply voltage
V
DD
=
2.7 V~3.6 V
Operating temperature
Ta
= −40°C~85°C
Organization
4M
×
8 bits / 2M
×
16 bits
Functions
Simultaneous Read/Write
Auto Program, Auto Erase
Fast Program Mode / Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
Block erase architecture
8
×
8 Kbytes / 63
×
64 Kbytes
Boot block architecture
TC58FVT321FT/XB: top boot block
TC58FVB321FT/XB: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access time
70 ns
(C
L
: 30 pF)
100 ns
(C
L
: 100 pF)
Power consumption
10
µA
(Standby)
30 mA
(Read operation)
15 mA
(Program/Erase operations)
Package
TC58FVT321/B321FT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVT321/B321XB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
000630EBA1
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document
shall be made at the customer’s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
2002-08-06 1/48

TC58FVT321XB-10 Related Products

TC58FVT321XB-10 TC58FVB321FT-10 TC58FVT321FT-10 TC58FVT321XB-70 TC58FVT321XB TC58FVT321FT-70 TC58FVT321-10 TC58FV321
Description toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory
Parts packaging code BGA TSOP1 TSOP1 BGA - TSOP1 - -
package instruction 7 X 10 MM, 0.80 MM PITCH, TFBGA-56 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 7 X 10 MM, 0.80 MM PITCH, TFBGA-56 - 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 - -
Contacts 56 48 48 56 - 48 - -
Reach Compliance Code unknow unknow unknow unknow - unknow - -
Maximum access time 100 ns 100 ns 100 ns 70 ns - 70 ns - -
Spare memory width 8 8 8 8 - 8 - -
JESD-30 code R-PBGA-B56 R-PDSO-G48 R-PDSO-G48 R-PBGA-B56 - R-PDSO-G48 - -
length 10 mm 18.4 mm 18.4 mm 10 mm - 18.4 mm - -
memory density 33554432 bi 33554432 bi 33554432 bi 33554432 bi - 33554432 bi - -
Memory IC Type FLASH FLASH FLASH FLASH - FLASH - -
memory width 16 16 16 16 - 16 - -
Number of functions 1 1 1 1 - 1 - -
Number of terminals 56 48 48 56 - 48 - -
word count 2097152 words 2097152 words 2097152 words 2097152 words - 2097152 words - -
character code 2000000 2000000 2000000 2000000 - 2000000 - -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS - -
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C - 85 °C - -
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C - -40 °C - -
organize 2MX16 2MX16 2MX16 2MX16 - 2MX16 - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - -
encapsulated code TFBGA TSOP1 TSOP1 TFBGA - TSOP1 - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR - -
Package form GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH - SMALL OUTLINE, THIN PROFILE - -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL - PARALLEL - -
Programming voltage 3 V 3 V 3 V 3 V - 3 V - -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified - -
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm - 1.2 mm - -
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V - 3.6 V - -
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V - 2.7 V - -
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V - 3 V - -
surface mount YES YES YES YES - YES - -
technology CMOS CMOS CMOS CMOS - CMOS - -
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL - INDUSTRIAL - -
Terminal form BALL GULL WING GULL WING BALL - GULL WING - -
Terminal pitch 0.8 mm 0.5 mm 0.5 mm 0.8 mm - 0.5 mm - -
Terminal location BOTTOM DUAL DUAL BOTTOM - DUAL - -
width 7 mm 12 mm 12 mm 7 mm - 12 mm - -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1304  2783  2136  2772  333  27  57  44  56  7 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号