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TC58FVT321XB-70

Description
toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory
Categorystorage    storage   
File Size549KB,48 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TC58FVT321XB-70 Overview

toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory

TC58FVT321XB-70 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Parts packaging codeBGA
package instruction7 X 10 MM, 0.80 MM PITCH, TFBGA-56
Contacts56
Reach Compliance Codeunknow
Maximum access time70 ns
Spare memory width8
JESD-30 codeR-PBGA-B56
length10 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Humidity sensitivity level1
Number of functions1
Number of terminals56
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width7 mm
TC58FVT321/B321FT/XB-70,-10
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32-MBIT (4M
×
8 BITS / 2M
×
16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory
organized as 4,194,304 words
×
8 bits or as 2,097,152 words
×
16 bits. The TC58FVT321/B321 features commands
for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on
the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES
Power supply voltage
V
DD
=
2.7 V~3.6 V
Operating temperature
Ta
= −40°C~85°C
Organization
4M
×
8 bits / 2M
×
16 bits
Functions
Simultaneous Read/Write
Auto Program, Auto Erase
Fast Program Mode / Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
Block erase architecture
8
×
8 Kbytes / 63
×
64 Kbytes
Boot block architecture
TC58FVT321FT/XB: top boot block
TC58FVB321FT/XB: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access time
70 ns
(C
L
: 30 pF)
100 ns
(C
L
: 100 pF)
Power consumption
10
µA
(Standby)
30 mA
(Read operation)
15 mA
(Program/Erase operations)
Package
TC58FVT321/B321FT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVT321/B321XB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
000630EBA1
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document
shall be made at the customer’s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
2002-08-06 1/48

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Parts packaging code BGA TSOP1 TSOP1 - BGA TSOP1 - -
package instruction 7 X 10 MM, 0.80 MM PITCH, TFBGA-56 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 - 7 X 10 MM, 0.80 MM PITCH, TFBGA-56 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 - -
Contacts 56 48 48 - 56 48 - -
Reach Compliance Code unknow unknow unknow - unknow unknow - -
Maximum access time 70 ns 100 ns 100 ns - 100 ns 70 ns - -
Spare memory width 8 8 8 - 8 8 - -
JESD-30 code R-PBGA-B56 R-PDSO-G48 R-PDSO-G48 - R-PBGA-B56 R-PDSO-G48 - -
length 10 mm 18.4 mm 18.4 mm - 10 mm 18.4 mm - -
memory density 33554432 bi 33554432 bi 33554432 bi - 33554432 bi 33554432 bi - -
Memory IC Type FLASH FLASH FLASH - FLASH FLASH - -
memory width 16 16 16 - 16 16 - -
Number of functions 1 1 1 - 1 1 - -
Number of terminals 56 48 48 - 56 48 - -
word count 2097152 words 2097152 words 2097152 words - 2097152 words 2097152 words - -
character code 2000000 2000000 2000000 - 2000000 2000000 - -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS - -
Maximum operating temperature 85 °C 85 °C 85 °C - 85 °C 85 °C - -
Minimum operating temperature -40 °C -40 °C -40 °C - -40 °C -40 °C - -
organize 2MX16 2MX16 2MX16 - 2MX16 2MX16 - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - -
encapsulated code TFBGA TSOP1 TSOP1 - TFBGA TSOP1 - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - -
Package form GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE - GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE - -
Parallel/Serial PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL - -
Programming voltage 3 V 3 V 3 V - 3 V 3 V - -
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified - -
Maximum seat height 1.2 mm 1.2 mm 1.2 mm - 1.2 mm 1.2 mm - -
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V - 3.6 V 3.6 V - -
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V - 2.7 V 2.7 V - -
Nominal supply voltage (Vsup) 3 V 3 V 3 V - 3 V 3 V - -
surface mount YES YES YES - YES YES - -
technology CMOS CMOS CMOS - CMOS CMOS - -
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL - INDUSTRIAL INDUSTRIAL - -
Terminal form BALL GULL WING GULL WING - BALL GULL WING - -
Terminal pitch 0.8 mm 0.5 mm 0.5 mm - 0.8 mm 0.5 mm - -
Terminal location BOTTOM DUAL DUAL - BOTTOM DUAL - -
width 7 mm 12 mm 12 mm - 7 mm 12 mm - -
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