TC58FV321 datasheet, PDF - EEWORLD Datasheet

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TC58FV321: Descriptiontoshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory; File Size549KB，48 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC58FV321 Overview

toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory

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TC58FVT321/B321FT/XB-70,-10

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

32-MBIT (4M

8 BITS / 2M

16 BITS) CMOS FLASH MEMORY

DESCRIPTION

The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory

organized as 4,194,304 words

8 bits or as 2,097,152 words

16 bits. The TC58FVT321/B321 features commands

for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on

the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The

TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or

Erase operation.

FEATURES

•

Power supply voltage

2.7 V~3.6 V

Operating temperature

= −40°C~85°C

Organization

8 bits / 2M

16 bits

Functions

Simultaneous Read/Write

Auto Program, Auto Erase

Fast Program Mode / Acceleration Mode

Program Suspend/Resume

Erase Suspend/Resume

data polling / Toggle bit

block protection, boot block protection

Automatic Sleep, support for hidden ROM area

common flash memory interface (CFI)

Byte/Word Modes

•

Block erase architecture

8 Kbytes / 63

64 Kbytes

Boot block architecture

TC58FVT321FT/XB: top boot block

TC58FVB321FT/XB: bottom boot block

Mode control

Compatible with JEDEC standard commands

Erase/Program cycles

cycles typ.

Access time

70 ns

: 30 pF)

100 ns

: 100 pF)

Power consumption

µA

(Standby)

30 mA

(Read operation)

15 mA

(Program/Erase operations)

Package

TC58FVT321/B321FT:

TSOPI48-P-1220-0.50 (weight: 0.51 g)

TC58FVT321/B321XB:

P-TFBGA56-0710-0.80AZ (weight: 0.125 g)

•

000630EBA1

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,

when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid

situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to

property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most

recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide

for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

•

The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control

instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document

shall be made at the customer’s own risk.

•

The products described in this document are subject to the foreign exchange and foreign trade laws.

•

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

•

The information contained herein is subject to change without notice.

2002-08-06 1/48

TC58FV321 Related Products

	TC58FV321	TC58FVB321FT-10	TC58FVT321FT-10	TC58FVT321XB-70	TC58FVT321XB	TC58FVT321XB-10	TC58FVT321FT-70	TC58FVT321-10
Description	toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory	toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory	toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory	toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory	toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory	toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory	toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory	toshiba mos digital integrated circuit silicon gate Cmos 32-mbit (4M X 8 bits / 2M X 16 bits) Cmos flash memory
Parts packaging code	-	TSOP1	TSOP1	BGA	-	BGA	TSOP1	-
package instruction	-	12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	7 X 10 MM, 0.80 MM PITCH, TFBGA-56	-	7 X 10 MM, 0.80 MM PITCH, TFBGA-56	12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	-
Contacts	-	48	48	56	-	56	48	-
Reach Compliance Code	-	unknow	unknow	unknow	-	unknow	unknow	-
Maximum access time	-	100 ns	100 ns	70 ns	-	100 ns	70 ns	-
Spare memory width	-	8	8	8	-	8	8	-
JESD-30 code	-	R-PDSO-G48	R-PDSO-G48	R-PBGA-B56	-	R-PBGA-B56	R-PDSO-G48	-
length	-	18.4 mm	18.4 mm	10 mm	-	10 mm	18.4 mm	-
memory density	-	33554432 bi	33554432 bi	33554432 bi	-	33554432 bi	33554432 bi	-
Memory IC Type	-	FLASH	FLASH	FLASH	-	FLASH	FLASH	-
memory width	-	16	16	16	-	16	16	-
Number of functions	-	1	1	1	-	1	1	-
Number of terminals	-	48	48	56	-	56	48	-
word count	-	2097152 words	2097152 words	2097152 words	-	2097152 words	2097152 words	-
character code	-	2000000	2000000	2000000	-	2000000	2000000	-
Operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	-	85 °C	85 °C	85 °C	-	85 °C	85 °C	-
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-	-40 °C	-40 °C	-
organize	-	2MX16	2MX16	2MX16	-	2MX16	2MX16	-
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	-	TSOP1	TSOP1	TFBGA	-	TFBGA	TSOP1	-
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-
Package form	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	-
Parallel/Serial	-	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	-
Programming voltage	-	3 V	3 V	3 V	-	3 V	3 V	-
Certification status	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	-
Maximum seat height	-	1.2 mm	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	-
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V	3.6 V	-	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	-	2.7 V	2.7 V	2.7 V	-	2.7 V	2.7 V	-
Nominal supply voltage (Vsup)	-	3 V	3 V	3 V	-	3 V	3 V	-
surface mount	-	YES	YES	YES	-	YES	YES	-
technology	-	CMOS	CMOS	CMOS	-	CMOS	CMOS	-
Temperature level	-	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	-
Terminal form	-	GULL WING	GULL WING	BALL	-	BALL	GULL WING	-
Terminal pitch	-	0.5 mm	0.5 mm	0.8 mm	-	0.8 mm	0.5 mm	-
Terminal location	-	DUAL	DUAL	BOTTOM	-	BOTTOM	DUAL	-
width	-	12 mm	12 mm	7 mm	-	7 mm	12 mm	-

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