NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 80 Volt V
CEO
* 1 Amp continuous current
* Gain of 2K at I
C
=1 Amp
* P
tot
= 1 Watt
ZTX602
ZTX603
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX602
80
60
10
4
1
1
5.7
E-Line
TO92 Compatible
ZTX603
100
80
UNIT
V
V
V
A
A
W
mW/ °C
°C
E
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
80
60
10
0.01
10
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.1
10
1.0
1.0
1.8
1.7
3-209
ZTX602
MIN.
100
80
10
ZTX603
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=60V
V
CB
=80V
V
CB
=60V,
T
amb
=100°C
V
CB
=80V,
T
amb
=100°C
V
EB
=8V
V
CES
=60V
V
CES
=80V
I
C
=400mA,
I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
IC=1A, V
CE
=5V*
MAX. MIN.
0.01
10
0.1
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
10
1.0
1.0
1.8
1.7
V
V
V
V
ZTX602
ZTX603
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX602
MIN.
Static Forward
Current Transfer
Ratio
h
FE
2K
5K
2K
0.5K
150
ZTX603
MAX.
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
MHz
pF
pF
µ
s
µ
s
UNIT
CONDITIONS.
MAX. MIN.
2K
5K
2K
0.5K
150
90 Typical
15 Typical
0.5 Typical
1.1 Typical
100K
100K
Transition Frequency f
T
Input Capacitance
Output Capacitance
Switching Times
C
ibo
C
obo
t
on
t
off
I
C
=100mA, V
CE
=10V
f=20MHz
V
EB
=500mV, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Maximum Power Dissipation (W)
1.0
R
5
= 200KΩ
R
5
= 50KΩ
R
5
= 10KΩ
R
5
= 1MΩ
R
5
=
∞
0.8
0.6
0.4
0.2
0
1
10
100
200
DC Conditions
ZTX602
ZTX603
V
CE
- Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T
amb
(
max
)
=
Power
(max ) −
Power
(
act)
+25°
C
0.0057
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-210
ZTX602
ZTX603
TYPICAL CHARACTERISTICS
1.6
1.4
1.8
-55°C
+25°C
+100°C
+175°C
h
FE
- Gain normalised to 1 Amp
2.5
-55°C
+25°C
+100°C
2.0
1.5
V
CE
=5V
V
CE(sat)
- (Volts)
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
I
C
/I
B
=100
1.0
0.5
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
2.2
2.0
V
BE(sat)
- (Volts)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-55°C
+25°C
+100°C
+175°C
2.0
1.8
1.6
-55°C
+25°C
+100°C
V
BE
- (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
V
CE
=5V
I
C
/I
B
=100
0.01
0.1
1
10
0.2
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
10
V
BE(on)
v I
C
I
C
- Collector Current (Amps)
1
D.C.
1s
100ms
10ms
1.0ms
100µs
0.1
ZTX602
ZTX603
0.01
1
10
100
1000
V
CE
-
Collector Voltage (Volts)
Safe Operating Area
3-211
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