16,777,216-word BY 64-bit synchronous dram module
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| Parts packaging code | DIMM |
| package instruction | DIMM, DIMM168 |
| Contacts | 168 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 7 ns |
| Maximum clock frequency (fCLK) | 100 MHz |
| I/O type | COMMON |
| JESD-30 code | R-XDMA-N168 |
| memory density | 1073741824 bi |
| Memory IC Type | SYNCHRONOUS DRAM MODULE |
| memory width | 64 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 168 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 16MX64 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| encapsulated code | DIMM |
| Encapsulate equivalent code | DIMM168 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| Maximum standby current | 0.016 A |
| Maximum slew rate | 1.44 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| THMY641661BEG-10 | THMY641661BEG | THMY641661BEG-80 | |
|---|---|---|---|
| Description | 16,777,216-word BY 64-bit synchronous dram module | 16,777,216-word BY 64-bit synchronous dram module | 16,777,216-word BY 64-bit synchronous dram module |
| Maker | Toshiba Semiconductor | - | Toshiba Semiconductor |
| Parts packaging code | DIMM | - | DIMM |
| package instruction | DIMM, DIMM168 | - | DIMM, DIMM168 |
| Contacts | 168 | - | 168 |
| Reach Compliance Code | unknow | - | unknow |
| ECCN code | EAR99 | - | EAR99 |
| access mode | FOUR BANK PAGE BURST | - | FOUR BANK PAGE BURST |
| Maximum access time | 7 ns | - | 6 ns |
| Maximum clock frequency (fCLK) | 100 MHz | - | 125 MHz |
| I/O type | COMMON | - | COMMON |
| JESD-30 code | R-XDMA-N168 | - | R-XDMA-N168 |
| memory density | 1073741824 bi | - | 1073741824 bi |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | - | SYNCHRONOUS DRAM MODULE |
| memory width | 64 | - | 64 |
| Number of functions | 1 | - | 1 |
| Number of ports | 1 | - | 1 |
| Number of terminals | 168 | - | 168 |
| word count | 16777216 words | - | 16777216 words |
| character code | 16000000 | - | 16000000 |
| Operating mode | SYNCHRONOUS | - | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | - | 70 °C |
| organize | 16MX64 | - | 16MX64 |
| Output characteristics | 3-STATE | - | 3-STATE |
| Package body material | UNSPECIFIED | - | UNSPECIFIED |
| encapsulated code | DIMM | - | DIMM |
| Encapsulate equivalent code | DIMM168 | - | DIMM168 |
| Package shape | RECTANGULAR | - | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | - | MICROELECTRONIC ASSEMBLY |
| power supply | 3.3 V | - | 3.3 V |
| Certification status | Not Qualified | - | Not Qualified |
| refresh cycle | 4096 | - | 4096 |
| Maximum standby current | 0.016 A | - | 0.016 A |
| Maximum slew rate | 1.44 mA | - | 1.92 mA |
| Maximum supply voltage (Vsup) | 3.6 V | - | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | - | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | - | 3.3 V |
| surface mount | NO | - | NO |
| technology | CMOS | - | CMOS |
| Temperature level | COMMERCIAL | - | COMMERCIAL |
| Terminal form | NO LEAD | - | NO LEAD |
| Terminal pitch | 1.27 mm | - | 1.27 mm |
| Terminal location | DUAL | - | DUAL |
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