THMY641661BEG-80 datasheet, PDF

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THMY641661BEG-80: Description16,777,216-word BY 64-bit synchronous dram module; Categorystorage storage; File Size641KB，13 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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THMY641661BEG-80 Overview

16,777,216-word BY 64-bit synchronous dram module

THMY641661BEG-80 Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum standby current	0.016 A
Maximum slew rate	1.92 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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THMY641661BEG-80 Related Products

	THMY641661BEG-80	THMY641661BEG	THMY641661BEG-10
Description	16,777,216-word BY 64-bit synchronous dram module	16,777,216-word BY 64-bit synchronous dram module	16,777,216-word BY 64-bit synchronous dram module
Maker	Toshiba Semiconductor	-	Toshiba Semiconductor
Parts packaging code	DIMM	-	DIMM
package instruction	DIMM, DIMM168	-	DIMM, DIMM168
Contacts	168	-	168
Reach Compliance Code	unknow	-	unknow
ECCN code	EAR99	-	EAR99
access mode	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST
Maximum access time	6 ns	-	7 ns
Maximum clock frequency (fCLK)	125 MHz	-	100 MHz
I/O type	COMMON	-	COMMON
JESD-30 code	R-XDMA-N168	-	R-XDMA-N168
memory density	1073741824 bi	-	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	-	SYNCHRONOUS DRAM MODULE
memory width	64	-	64
Number of functions	1	-	1
Number of ports	1	-	1
Number of terminals	168	-	168
word count	16777216 words	-	16777216 words
character code	16000000	-	16000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C
organize	16MX64	-	16MX64
Output characteristics	3-STATE	-	3-STATE
Package body material	UNSPECIFIED	-	UNSPECIFIED
encapsulated code	DIMM	-	DIMM
Encapsulate equivalent code	DIMM168	-	DIMM168
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	-	3.3 V
Certification status	Not Qualified	-	Not Qualified
refresh cycle	4096	-	4096
Maximum standby current	0.016 A	-	0.016 A
Maximum slew rate	1.92 mA	-	1.44 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V
surface mount	NO	-	NO
technology	CMOS	-	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL
Terminal form	NO LEAD	-	NO LEAD
Terminal pitch	1.27 mm	-	1.27 mm
Terminal location	DUAL	-	DUAL

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