WJA1035
+5V Active-Bias InGaP HBT Gain Block
Product Features
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Cascadable gain block
50 – 4000 MHz
15 dB Gain @ 1.9GHz
+16.5 dBm P1dB @ 1.9GHz
+35 dBm OIP3 @ 1.9GHz
Operates from +5V @ 65mA
Product Description
The WJA1035 is a cascadable gain block that offers high
linearity in a low-cost surface-mount package. At 1.9 GHz,
the WJA1035 typically provides 15 dB gain, +35 dBm
OIP3, and +16.5 dBm P1dB. The device is housed in a
RoHS-compliant SOT-89 industry-standard SMT package
using a NiPdAu plating to eliminate the possibility of tin
whiskering.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
0.2dB gain flatness from 0.3-2.5GHz The WJA1035 consists of Darlington pair amplifiers using
a high reliability InGaP/GaAs HBT process technology.
Robust 1000V ESD, Class 1C
The MMIC amplifier is internally matched to 50Ω and only
RoHS-compliant SOT-89 package
requires DC-blocking capacitors and a bias inductor for
operation. An internal active bias is designed to enable
stable performance over temperature. A dropping bias
resistor is not required allowing the device to be biased
Applications
directly from a +5V supply voltage.
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
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Wireless Infrastructure
General Purpose
Cellular GSM, PCS, UMTS
W-CDMA
,
TD-SCDMA
,
WiMAX
The broadband amplifier can be directly applied to various
current and next generation wireless technologies such as
GSM, CDMA, W-CDMA, WiBro, and WiMAX. The
WJA1035 is ideal for general purpose applications such as
LO buffering, IF amplification and pre-driver stages within
the 50 to 4000 MHz frequency range.
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Output IP2
Noise Figure
Device Voltage
Device Current
Typical Performance
(3)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
Min
50
Typ
1900
14.8
13
16
+16.5
+35
+46.2
5.8
5
65
Max
4000
Parameter Units
Frequency
S21
S11
S22
Output P1dB
Output IP3
(2)
Output IP2
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dBm
dB
500
14.3
-13
-16
+18.4
+35.1
+50.4
5.2
900
14.3
-15
-20
+17.8
+34.8
+47
5.4
Typical
1900
14.4
-33
-13
+16.5
+34.2
+46.2
5.8
2140
14.3
-37
-12
+16.2
+33.5
+40.1
6.0
2500
14.1
-27
-13
+14.6
+31.8
+37.9
6.2
3. Listed typical performance parameters measured on evaluation board.
1. Test conditions: 25 ºC, Supply Voltage = +5 V, 50
Ω
System. S-parameters and 3OIP measured at
device pins. All other specifications measured on evaluation board.
2. 3OIP measured with two tones at an output power of 3 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
End of Life Notice
Last time buy date: Oct. 1, 2010
Recommended replacement part: TQP3M9008
Absolute Maximum Rating
Parameter
Storage Temperature
Supply Voltage
Input Power
θ
jc
(junction to paddle)
Maximum Junction Temperature
Rating
-55 to +150
°C
+6.5 V
+24 dBm
83.8
°C
/ W
150
°C
Ordering Information
Part No.
WJA1035
WJA1035-PCB
Description
+5V Active Bias InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Package)
50 – 4000 MHz Fully Assembled Eval. Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
Standard tape / reel size = 1000 pieces on a 7″ reel
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 4
April 2010
WJA1035
+5V Active-Bias InGaP HBT Gain Block
Typical Evaluation Board RF Performance
Supply Bias = +5 V, I
cc
= 65 mA
Gain vs. Frequency
16
14
S11, S22 (dB)
Gain(dB)
12
10
8
-40C
6
0
1000
2000
Frequency(MHz)
3000
4000
+25C
+85C
-30
-35
0
1000
2000
Frequency(MHz)
3000
4000
S11
S22
0
-5
-10
-15
-20
-25
NF (dB)
Return Loss
T = 25°
C
Noise Figure vs. Frequency
10
9
8
7
6
5
4
3
2
0
1000
2000
Frequency (MHz)
3000
4000
-40C
+25C
+85C
OIP3 vs. Output Power
Freq = 1900MHz
OIP3 vs. Frequency
Pout = 3 dBm/tone
OIP3 vs. Vcc
Freq = 1900MHz
36
34
OIP3 (dBm)
OIP3 (dBm)
32
30
28
26
38
36
34
OIP3 (dBm)
0
1000
2000
Frequency (MHz)
3000
4000
32
30
28
26
24
36
34
32
30
28
26
4.7
0
2
4
6
8
Output Power per tone (dBm)
10
4.8
4.9
Vcc (V)
5
5.1
5.2
OIP2 vs. Frequency
55
50
OIP2 (dBm)
45
40
35
30
0
1000
2000
Frequency (MHz)
3000
Pout = 3 dBm/tone
P1dB vs Frequency
20
P1dB vs. Vcc
Freq = 1900MHz
20
18
P1dB (dBm)
-40C
+25C
+85C
3000
4000
18
P1dB (dBm)
16
16
14
12
10
4.7
14
12
10
0
1000
2000
Frequency (MHz)
4.8
4.9
Vcc (V)
5.0
5.1
5.2
Icc vs. Temperature
75
Vcc = +5V
Icc vs. Vcc
120
100
70
Icc (mA)
Icc (mA)
80
65
60
60
40
-40C
55
-50
-25
0
25
Tem
perature (°
C)
50
75
100
20
4.0
4.5
+25C
+85C
5.5
6.0
5.0
Vcc (V)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 4
April 2010
WJA1035
+5V Active-Bias InGaP HBT Gain Block
Vcc = 5.00V
Icc = 65 mA
Application Circuit
R4
0
Ω
C3
Bypass
Capacitor
RF IN
R1
0
Ω
L1
RF Choke
RF OUT
WJA1035
C1
Blocking
Capacitor
R2
0
Ω
C2
Blocking
Capacitor
Recommended Component Values
(1)
Ref. Name Value / Type
L1
470 nH ferrite core wire wound inductor
(2)
C1, C2
1000 pF NPO chip capacitor
C3
0.018
µF
chip capacitor
R1, R2, R4 0
Ω
(3)
C4, C5, C6, Do Not Place
(3)
R3, R5, R6,
R7, R8
1.
2.
3.
Size
0805
0603
0603
0603
The listed values are contained on the evaluation board to achieve optimal broadband performance
For lower cost and performance (500 – 4000 MHz) option use 18 nH air core wire wound inductor.
Place holders for the 0Ω resistors and “Do Not Place” references are not needed for final design.
Typical Device Data
S-Parameters (V
device
= +5 V, I
CC
= 65 mA, T = 25
°C,
calibrated to device leads)
Freq (GHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
10
-10.16
-61.28
19.40
162.94
-22.46
50
-12.25
-143.17
15.42
162.78
-19.05
100
-12.41
-162.29
14.78
166.41
-18.88
200
-12.44
-173.93
14.53
164.23
-18.76
400
-12.31
178.17
14.57
155.10
-18.72
600
-11.99
173.61
14.55
144.25
-18.73
800
-11.91
168.46
14.56
133.07
-18.69
1000
-12.07
160.37
14.66
121.92
-18.64
1200
-12.21
150.24
14.64
109.78
-18.64
1400
-12.11
140.54
14.63
98.22
-18.50
1600
-12.21
130.99
14.73
85.63
-18.50
1800
-12.60
123.09
14.82
72.85
-18.37
2000
-13.91
112.02
14.90
59.92
-18.27
2200
-16.10
92.29
14.90
46.06
-18.17
2400
-19.13
58.96
14.77
31.75
-18.18
2600
-20.93
11.72
14.63
16.81
-18.14
2800
-19.67
-45.91
14.31
2.27
-18.17
3000
-15.52
-85.55
13.81
-13.95
-18.23
3200
-11.92
-108.78
13.21
-28.79
-18.52
3400
-9.28
-124.42
12.35
-43.88
-18.75
3600
-7.55
-139.54
11.39
-58.05
-19.11
3800
-6.42
-154.72
10.45
-71.07
-19.31
4000
-5.54
-169.61
9.32
-84.12
-19.58
S12 (ang)
26.14
8.34
2.92
-1.06
-6.33
-11.07
-15.21
-19.00
-23.18
-27.51
-32.33
-36.09
-41.47
-46.53
-51.60
-57.71
-63.91
-69.60
-75.78
-81.77
-87.00
-91.04
-96.12
S22 (dB)
-6.89
-13.89
-15.89
-16.83
-17.32
-17.59
-17.73
-17.26
-16.98
-16.74
-16.83
-17.03
-16.53
-15.26
-13.52
-12.22
-11.11
-10.20
-9.13
-8.22
-7.30
-6.68
-6.44
S22 (ang)
-44.97
-116.26
-143.27
-162.44
-176.16
175.16
171.60
172.75
175.62
177.93
177.93
177.13
178.93
179.00
179.09
177.06
174.24
168.42
161.26
152.12
144.80
140.38
135.38
Device S-parameters are available for Download from the website at: http://www.wj.com
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 4
April 2010
WJA1035
+5V Active-Bias InGaP HBT Gain Block
Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260
°C
reflow temperature) and leaded
(maximum 245
°C
reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The WJA1035 will be marked with an “A1035”
designator with an alphanumeric lot code
marked below the part designator.
A1035
XXXX-X
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes
≥
1000V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class IV
Passes
≥
1000V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260
°C
convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated thru
diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 4
April 2010
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