BSM300GA170DN2E3166 datasheet, PDF

BSM300GA170DN2E3166: DescriptionInsulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES; CategoryDiscrete semiconductor The transistor; File Size273KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSM300GA170DN2E3166 Overview

Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compli
Maximum collector current (IC)	440 A
Collector-emitter maximum voltage	1700 V
Gate-emitter maximum voltage	20 V
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	2500 W
VCEsat-Max	3.9 V
Base Number Matches	1

	BSM300GA170DN2E3166	BSM200GT120DN2	BSM101AR	MTB1-77PH038-01-FR022	BSM300GA120DN2E3166	BSM15GD120D2	BSM25GD120D2	BSM35GD120D2
Description	Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES	Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES	Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,	77 CONTACT(S), MALE, D MICROMINIATURE CONNECTOR, CRIMP, PLUG	Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES	Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES,	Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES,	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES,
Reach Compliance Code	compli	unknow	compliant	compliant	compliant	compliant	compliant	compliant
Maximum collector current (IC)	440 A	300 A	-	-	430 A	25 A	35 A	50 A
Collector-emitter maximum voltage	1700 V	1200 V	-	-	1200 V	1200 V	1200 V	1200 V
Gate-emitter maximum voltage	20 V	20 V	-	-	20 V	20 V	20 V	20 V
Number of components	1	1	1	-	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	-	150 °C	150 °C	150 °C	150 °C
Maximum power dissipation(Abs)	2500 W	1400 W	700 W	-	2500 W	145 W	200 W	280 W
VCEsat-Max	3.9 V	3 V	-	-	3 V	3.2 V	3.2 V	3.2 V
Maker	-	-	Infineon	-	Infineon	Infineon	Infineon	Infineon

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