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DF3A3.6FE

Description
product for use only as protection against electrostatic discharge (esd).
CategoryDiscrete semiconductor    diode   
File Size150KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

DF3A3.6FE Overview

product for use only as protection against electrostatic discharge (esd).

DF3A3.6FE Parametric

Parameter NameAttribute value
package instructionR-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance130 Ω
JESD-30 codeR-PDSO-F3
JESD-609 codee0
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.1 W
Certification statusNot Qualified
Nominal reference voltage3.6 V
surface mountYES
technologyZENER
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
Maximum voltage tolerance5.56%
Working test current5 mA
Base Number Matches1
DF3A3.6FE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A3.6FE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
125
−55~125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
1-2SA1A
Weight: 0.0023 g (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 1 V
V
R
= 0, f = 1 MHz
Test Condition
Min
3.4
Typ.
3.6
110
Max
3.8
130
10
Unit
V
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
1
2007-11-01
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