UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A / PN2907A
!Features
1) BV
CEO
< -60V (I
C
=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A / PN2222A.
!
External dimensions
(Units : mm)
UMT2907A
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
0.2
0.9±0.1
0.7±0.1
1.25±0.1
2.1±0.1
0~0.1
(3)
!
Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2907A SST2907A MMST2907A PN2907A
UMT3
R2F
T106
3000
SST3
R2F
T116
3000
SMT3
R2F
T146
3000
TO-92
-
T93
3000
ROHM : UMT3
EIAJ : SC-70
0.3+0.1
−0
All terminals have
same dimensions
0.15±0.05
0.1~0.4
(1) Emitter
(2) Base
(3) Collector
SST2907A
(1)
2.9±0.2
1.9±0.2
0.95 0.95
(2)
0.95 +0.2
−0.1
0.45±0.1
1.3+0.2
−
0.1
2.4±0.2
0~0.1
0.2Min.
(3)
All terminals have
same dimensions
0.4 +0.1
−0.05
+0.1
0.15
−0.06
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
UMT2907A,
Collector power SST2907A,
dissipation
MMST2907A
PN2907A
Junction temperature
Storage temperature
Tj
Tstg
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
-60
-60
-5
-0.6
0.2
0.625
150
-55~+150
Unit
V
V
V
A
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
MMST2907A
(1)
2.9±0.2
1.9±0.2
0.95 0.95
(2)
1.1+0.2
−0.1
0.8±0.1
P
C
W
(3)
1.6+0.2
−
0.1
2.8±0.2
0~0.1
All terminals have
same dimensions
˚C
˚C
ROHM : SMT3
EIAJ : SC-59
0.4 +0.1
−0.05
+0.1
0.15
−0.06
0.3~0.6
(1) Emitter
(2) Base
(3) Collector
PN2907A
4.8±0.2
4.8±0.2
3.7±0.2
(12.7Min.)
(1)
(2)
5
(3)
2.5 +0.3
−0.1
0.45±0.1
2.3
2.5Min.
0.5±0.1
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Min.
−60
−60
−5
−
−
−
−
−
0.6
−
75
100
DC current transfer ratio
h
FE
100
100
50
200
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−100
−100
−100
−0.4
−1.6
−1.3
−2.6
−
−
−
300
−
−
8
30
50
10
40
100
80
30
MHz
pF
pF
ns
ns
ns
ns
ns
ns
−
Unit
V
V
V
nA
nA
V
V
I
C
=10µA
I
C
=10mA
I
E
=10µA
V
CB
=−50V
V
CB
=−30V
V
EB
=−3V
I
C
/I
B
=−150mA/−15mA
I
C
/I
B
=−500mA/−50mA
I
C
/I
B
=−150mA/−15mA
I
C
/I
B
=−500mA/−50mA
V
CE
=−10V, I
C
=−0.1mA
V
CE
=−10V, I
C
=−1mA
V
CE
=−10V, I
C
=−10mA
V
CE
=−10V, I
C
=−150mA
V
CE
=−10V, I
C
=−500mA
V
CE
=−20V, I
C
=−50mA, f=100MHz
V
CB
=−10V, f=100kHz
V
EB
=−2V, f=100kHz
V
CC
=−30V, V
BE(OFF)
=−1.5V, I
C
=−150mA, I
B1
=−15mA
V
CC
=−30V, V
BE(OFF)
=−1.5V, I
C
=−150mA, I
B1
=−15mA
V
CC
=−30V, V
BE(OFF)
=−1.5V, I
C
=−150mA, I
B1
=−15mA
V
CC
=−30V, I
C
=−150mA, I
B1
=I
B2
=−15mA
V
CC
=−30V , I
C
=−150mA, I
B1
=I
B2
=−15mA
V
CC
=−30V, I
C
=−150mA, I
B1
=I
B2
=−15mA
Conditions
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
f
T
Cob
Cib
ton
td
tr
toff
tstg
tf
!
Electrical characteristic curves
Ta=25˚C
COLLECTOR CURRENT : I
C
(mA)
600
BASE-EMITTER SATURATION VOLTAGE : V
BE (sat)
(V)
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Ta=25˚C
I
C
/ I
B
=10
500
400
50
300
200
100
0
0
10
5
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
1
B
=0µA
Fig.1 Grounded emitter output
characteristics
Fig.2 Base-emitter saturation
voltage vs. collector current
1000
Ta=25˚C
DC CURRENT GAIN : h
FE
V
CE
=10V
100
1V
10
0.1
1.0
10
COLLECTOR CURRENT : I
C
(mA)
100
1000
Fig.3 DC current gain vs. collector current ( I )
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
1000
V
CE
=10V
DC CURRENT GAIN : h
FE
Ta=125˚C
Ta=25˚C
100
Ta=−55˚C
10
0.1
1.0
10
COLLECTOR CURRENT : I
C
(mA)
100
1000
Fig.4 DC current gain vs. collector current ( II )
1000
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
CE (sat)
(V)
Ta=25˚C
V
CE
=10V
f=1kHz
Ta=25˚C
I
C
/
I
B
=10
0.3
AC CURRENT GAIN : h
FE
0.2
100
0.1
10
0.1
1.0
10
COLLECTOR CURRENT : I
C
(mA)
100
1000
0
1.0
10
100
1000
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 AC current gain vs. collector current
Fig.6 Collector-emitter saturation
voltage vs. collector current
CURRENT GAIN-BANDWIDTH PRODUCT : f
T
(MHz)
BASE-EMITTER ON VOLTAGE : V
BE(on)
(V)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
10
100
1000
COLLECTOR CURRENT : I
C
(
mA)
Ta=25˚C
V
CE
=10V
1000
100
100MHz
300MHz
10
200MHz
Ta=25˚C
V
CE
=10V
Ta=25˚C
100
250MHz
1
200MHz
0.1
1
10
100
1000
COLLECTOR CURRENT : I
C
(
mA)
10
1
10
100
1000
COLLECTOR CURRENT : I
C
(
mA)
Fig.7 Grounded emitter propagation
characteristics
Fig.8 Gain bandwidth product
vs. collector current
Fig.9 Gain bandwidth product
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
1000
500
Ta=25˚C
V
CC
=30V
I
C
/ I
B
=10
100
Ta=25˚C
f=1MHz
Ta=25˚C
I
C
/
I
B
=10
CAPACITANCE (
pF)
10
C
ob
100
V
CC
=30V
10V
RISE TIME : tr
(ns)
Cib
TURN ON TIME : ton
(ns)
100
10
1
0.1
10
1
10
REVERSE BIAS VOLTAGE (
V)
100
1
10
100
1000
COLLECTOR CURRENT : I
C
(
mA)
5
1
10
100
1000
COLLECTOR CURRENT : I
C
(
mA)
Fig.10 Input/output capacitance
vs. voltage
Fig.11 Turn-on time vs.collector
current
Fig.12 Rise time vs. collector
current
1000
Ta=25˚C
V
CC
=30V
I
C
=10I
B1
=10I
B2
1000
Ta=25˚C
V
CC
=30V
I
C
=10I
B1
=10I
B2
STORAGE TIME : ts
(ns)
100
10
FALL TIME : tf
(ns)
1
10
100
1000
COLLECTOR CURRENT : I
C
(
mA)
100
10
1
10
100
1000
COLLECTOR CURRENT : I
C
(
mA)
Fig.13 Storage time vs. collector
current
Fig.14 Fall time vs. collector
current
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