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PMBFJ177

Description
P-channel silicon field-effect transistors
CategoryDiscrete semiconductor    The transistor   
File Size28KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

PMBFJ177 Overview

P-channel silicon field-effect transistors

PMBFJ177 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
FET technologyJUNCTION
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ174 to 177
P-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
April 1995

PMBFJ177 Related Products

PMBFJ177 PMBFJ175 PMBFJ174
Description P-channel silicon field-effect transistors P-channel silicon field-effect transistors P-channel silicon field-effect transistors
Is it Rohs certified? conform to conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
FET technology JUNCTION JUNCTION JUNCTION
JESD-609 code e3 e3 e3
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
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