Synchronous DRAM, 16MX16, 5.5ns, CMOS, PBGA54, FBGA-54
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Objectid | 1349949788 |
| package instruction | TFBGA, BGA54,9X9,32 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 5.5 ns |
| Other features | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 166 MHz |
| I/O type | COMMON |
| interleaved burst length | 1,2,4,8 |
| JESD-30 code | S-PBGA-B54 |
| length | 8 mm |
| memory density | 268435456 bit |
| Memory IC Type | SYNCHRONOUS DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 54 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 105 °C |
| Minimum operating temperature | -40 °C |
| organize | 16MX16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TFBGA |
| Encapsulate equivalent code | BGA54,9X9,32 |
| Package shape | SQUARE |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Filter level | AEC-Q100 |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Continuous burst length | 1,2,4,8,FP |
| Maximum standby current | 0.00001 A |
| Maximum slew rate | 0.11 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 2.7 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| width | 8 mm |
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