IS61WV25616EFALL-10B3LI datasheet, PDF

IS61WV25616EFALL-10B3LI: DescriptionStandard SRAM,; Categorystorage storage; File Size579KB，21 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS61WV25616EFALL-10B3LI Overview

Standard SRAM,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	7248986763
Reach Compliance Code	compliant
Country Of Origin	Mainland China, Taiwan
ECCN code	3A991.B.2.A
YTEOL	5.15
Maximum access time	10 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
length	8 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum seat height	1.2 mm
Maximum standby current	0.01 A
Minimum standby current	1.2 V
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	2.2 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	6 mm

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