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2SK3377-AZ

Description
Small Signal Field-Effect Transistor, 20A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB, TO-251, MP-3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size136KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

2SK3377-AZ Overview

Small Signal Field-Effect Transistor, 20A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB, TO-251, MP-3, 3 PIN

2SK3377-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeTO-251AB
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.078 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AB
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3377
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3377
2SK3377-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
Low On-state Resistance
R
DS(on)1
= 44 mΩ MAX. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 78 mΩ MAX. (V
GS
= 4.0 V, I
D
= 10 A)
Low C
iss
: C
iss
= 760 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
10
µ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20 V
0 V
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
±20
±20
±50
30
1.0
150
–55 to +150
15
23
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14328EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2000

2SK3377-AZ Related Products

2SK3377-AZ 2SK3377-Z-AZ
Description Small Signal Field-Effect Transistor, 20A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB, TO-251, MP-3, 3 PIN Small Signal Field-Effect Transistor, 20A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, TO-252, MP-3Z, 3 PIN
Maker NEC Electronics NEC Electronics
Parts packaging code TO-251AB TO-252AB
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 20 A 20 A
Maximum drain-source on-resistance 0.078 Ω 0.078 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AB TO-252AB
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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