DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3377
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
★
ORDERING INFORMATION
PART NUMBER
2SK3377
2SK3377-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
Low On-state Resistance
R
DS(on)1
= 44 mΩ MAX. (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 78 mΩ MAX. (V
GS
= 4.0 V, I
D
= 10 A)
•
Low C
iss
: C
iss
= 760 pF TYP.
•
Built-in Gate Protection Diode
•
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
±20
±20
±50
30
1.0
150
–55 to +150
15
23
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D14328EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
★
shows major revised points.
1999, 2000
2SK3377
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.0 V, I
D
= 10 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 10 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
5
2.0
10
35
54
760
150
71
13
170
43
34
2.5
Drain to Source On-state Resistance
44
78
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 20 A
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
17
3.0
4.7
1.0
39
62
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
τ
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
L
V
DD
PG.
D.U.T.
R
L
V
GS
V
GS
Wave Form
50
Ω
R
G
0
10%
V
GS
90%
V
DD
I
D
90%
90%
I
AS
I
D
V
DD
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D14328EJ3V0DS
2SK3377
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
35
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
30
25
20
15
10
5
0
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100
120 140 160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D
- Drain Current - A
100
ited )
Lim 0 V
1
n)
=
S(o
I
R
D
V
G S
(at
I
D(pulse)
1m
10
PW
0
µ
s
=1
D(DC)
0
µ
s
10
10
ms
Po
DC
Lim wer
Di
ite
d ssip
ati
on
s
1
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
˚C/W
100
R
th(ch-A)
= 125
˚C/W
10
R
th(ch-C)
= 4.17
˚C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14328EJ3V0DS
3
2SK3377
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
50
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
40
I
D
- Drain Current - A
I
D
- Drain Current - A
100
T
A
=
−55˚C
25˚C
75˚C
150˚C
30
V
GS
=10 V
10
20
4.0 V
1
10
0.1
1
2
3
4
V
DS
= 10 V
5
6
0
0
1
2
3
4
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
| y
fs
| - Forward Transfer Admittance - S
100
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14 16 18 20
V
GS
- Gate to Source Voltage - V
I
D
= 10 A
10
1
T
A
= 150˚C
75˚C
25˚C
−50˚C
0.1
0.01
0.01
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
Pulsed
70
60
50
40
30
20
10
0
0.1
1
10
100
V
GS
= 4.0 V
10 V
V
GS(th)
- Gate to Source Threshold Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
V
DS
= 10 V
I
D
= 1 mA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
˚C
4
Data Sheet D14328EJ3V0DS
2SK3377
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
100
80
60
40
20
0
−50
0
50
100
I
D
= 10 A
150
V
GS
= 4.0 V
10 V
Pulsed
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
V
GS
= 10 V
10
V
GS
= 0 V
1
0.1
0.01
0
0.5
1.0
1.5
T
ch
- Channel Temperature -
˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
SD
- Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
t
r
t
f
100
t
d(on)
1000
C
iss
100
C
oss
C
rss
10
t
d(off)
10
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
V
DD
= 48 V
30 V
12 V
12
10
8
6
20
V
DS
V
GS
4
2
I
D
= 20 A
0
0
4
8
12
16
20
24
28
32
V
GS
- Gate to Source Voltage - V
100
40
10
1
0.1
1
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D14328EJ3V0DS
5
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