KSP75/76/77
KSP75/76/77
Darlington Transistor
• Collector-Emitter Voltage: V
CES
= KSP75: 40V
KSP76: 50V
KSP77: 60V
• Collector Power Dissipation: P
C
(max)=625mW
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Collector-Base Voltage
: KSP75
: KSP76
: KSP77
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-40
-50
-60
-10
-500
625
150
-55~150
V
V
V
V
mA
mW
°C
°C
Parameter
Value
Units
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Base Breakdown Voltage
: KSP75
: KSP76
: KSP77
Collector-Base Breakdown Voltage
: KSP75
: KSP76
: KSP77
Collector Cut-off Current
: KSP75
: KSP76
: KSP77
I
EBO
I
CES
Emitter Cut-off Current
Collector Cut-off Current
: KSP75
: KSP76
: KSP77
h
FE
V
CE
(sat)
V
BE
(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
CE
= -30V, I
E
=0
V
CE
= -40V, I
E
=0
V
CE
= -50V, I
E
=0
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
I
C
= -100mA, I
B
= -0.1mA
V
CE
= -5V, I
C
= -100mA
10K
10K
-1.5
2
V
V
-500
-500
-500
nA
nA
nA
V
CE
= -30V, I
E
=0
V
CE
= -40V, I
E
=0
V
CE
= -50V, I
E
=0
V
CE
= -10V, I
B
=0
-100
-100
-100
-100
Test Condition
I
C
= -100µA, I
B
=0
Min.
-40
-50
-60
I
C
= -100µA, I
E
=0
-40
-50
-60
V
V
V
nA
nA
nA
nA
nA
Max.
Units
V
V
V
BV
CBO
I
CBO
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSP75/76/77
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000k
-10
V
CE
= -5V
I
C
= 1000 I
B
h
FE
, DC CURRENT GAIN
100k
V
BE
(sat)
-1
V
CE
(sat)
10k
1k
-1
-10
-100
-1000
-0.1
-1
-10
-100
-400
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
200
-10k
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
100
I
C
[A], COLLECTOR CURRENT
-1k
100
µ
S
1mS
10
1S
-100
T
C
= 25 C
O
T
a
= 25 C
O
1
-0.0
-10
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
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As used herein:
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1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
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or (b) support or sustain life, or (c) whose failure to perform
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
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No Identification Needed
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©2001 Fairchild Semiconductor Corporation
Rev. H3
Embedded System
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