EEWORLDEEWORLDEEWORLD

Part Number

Search

DS2011R-50

Description
FIFO, 2KX9, 50ns, Asynchronous, CMOS, PQCC32,
Categorystorage    storage   
File Size22KB,1 Pages
ManufacturerDALLAS
Websitehttp://www.dalsemi.com
Download Datasheet Parametric Compare View All

DS2011R-50 Overview

FIFO, 2KX9, 50ns, Asynchronous, CMOS, PQCC32,

DS2011R-50 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDALLAS
Reach Compliance Codeunknown
Maximum access time50 ns
Other featuresRETRANSMIT
Maximum clock frequency (fCLK)15.38 MHz
period time65 ns
JESD-30 codeS-PQCC-J32
JESD-609 codee0
memory density18432 bit
Memory IC TypeOTHER FIFO
memory width9
Number of functions1
Number of terminals32
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2KX9
Output characteristics3-STATE
ExportableNO
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC32,.5X.6
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum standby current0.002 A
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Base Number Matches1
DS2011
DS2011
2048 x 9 FIFO Chip
FEATURES
PIN ASSIGNMENT
W
D8
D3
D2
D1
D0
XI
FF
Q0
Q1
Q2
Q3
Q8
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
D4
D5
D6
D7
D2
D1
D0
D3
D8
W
NC
VCC
D4
D5
4 3 2 1 32 31 30
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13 15
17 19 21
14 16
18
20
Q3
Q8
GND
NC
R
Q4
Q5
32-Pin PLCC
051994 1/1
D6
D7
NC
FL/RT
RS
EF
X0/HF
Q7
Q6
First-in, first-out memory-based architecture
Flexible 2048 x 9 organization
Low-power HCMOS technology
Asychronous and simultaneous read/write
Bidirectional applications
Fully expandable by word width or depth
Empty and full warning flags
Half-full flag capability in single-device mode
Retransmit capability
High performance
Available in 50 ns, 65 ns, 80 ns, and 120 ns access
times
FL/RT
XI
RS
FF
EF
Q0
X0/HF
Q1
Q7
NC
Q6
Q2
Q5
Q4
R
28-Pin DIP
(300 and 600 Mil)
PIN DESCRIPTION
W
R
RS
FL/RT
D
0-8
Q
0-8
XI
XO/HF
FF
EF
V
CC
GND
NC
WRITE
READ
RESET
First Load/Retransmit
Data In
Data Out
Expansion In
Expansion Out/Half Full
Full Flag
Empty Flag
5 Volts
– Ground
– No Connect
Optional industrial temperature range -40°C to +85
°
C
available, designated N
DESCRIPTION
The DS2011 FIFO Chip implements a first-in, first-out
algorithm featuring asynchronous read/write opera-
tions, full, empty, and half-full flags, and unlimited ex-
pansion capability in both word size and depth. The
DS2011 is functionally and electrically equivalent to the
DS2009 512 x 9 FIFO Chip, with the exceptions listed in
the notes for DC Electrical Characteristics of the
DS2009 data sheet. Refer to the DS2009 data sheet for
detailed device description.
ECopyright
1995 by Dallas Semiconductor Corporation.
All Rights Reserved. For important information regarding
patents and other intellectual property rights, please refer to
Dallas Semiconductor databooks.

DS2011R-50 Related Products

DS2011R-50 DS2011D-50 DS2011D-120 DS2011R-65 DS2011R-80 DS2011D-65 DS2011RN-50 DS2011R-120 DS2011DN-50
Description FIFO, 2KX9, 50ns, Asynchronous, CMOS, PQCC32, FIFO, 2KX9, 50ns, Asynchronous, CMOS, PDIP28, FIFO, 2KX9, 120ns, Asynchronous, CMOS, PDIP28, FIFO, 2KX9, 65ns, Asynchronous, CMOS, PQCC32, FIFO, 2KX9, 80ns, Asynchronous, CMOS, PQCC32, FIFO, 2KX9, 65ns, Asynchronous, CMOS, PDIP28, FIFO, 2KX9, 50ns, Asynchronous, CMOS, PQCC32, FIFO, 2KX9, 120ns, Asynchronous, CMOS, PQCC32, FIFO, 2KX9, 50ns, Asynchronous, CMOS, PDIP28,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknow unknow unknown unknown unknown unknown unknown unknown
Maximum access time 50 ns 50 ns 120 ns 65 ns 80 ns 65 ns 50 ns 120 ns 50 ns
Other features RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT
Maximum clock frequency (fCLK) 15.38 MHz 15.38 MHz 7.14 MHz 12.5 MHz 10 MHz 12.5 MHz 15.38 MHz 7.14 MHz 15.38 MHz
JESD-30 code S-PQCC-J32 R-PDIP-T28 R-PDIP-T28 S-PQCC-J32 S-PQCC-J32 R-PDIP-T28 S-PQCC-J32 S-PQCC-J32 R-PDIP-T28
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
memory density 18432 bit 18432 bi 18432 bi 18432 bit 18432 bit 18432 bit 18432 bit 18432 bit 18432 bit
Memory IC Type OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO
memory width 9 9 9 9 9 9 9 9 9
Number of functions 1 1 1 1 1 1 1 1 1
Number of terminals 32 28 28 32 32 28 32 32 28
word count 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words 2048 words
character code 2000 2000 2000 2000 2000 2000 2000 2000 2000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 85 °C 70 °C 85 °C
organize 2KX9 2KX9 2KX9 2KX9 2KX9 2KX9 2KX9 2KX9 2KX9
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Exportable NO NO NO NO NO NO NO NO NO
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QCCJ DIP DIP QCCJ QCCJ DIP QCCJ QCCJ DIP
Encapsulate equivalent code LDCC32,.5X.6 DIP28,.3 DIP28,.3 LDCC32,.5X.6 LDCC32,.5X.6 DIP28,.3 LDCC32,.5X.6 LDCC32,.5X.6 DIP28,.3
Package shape SQUARE RECTANGULAR RECTANGULAR SQUARE SQUARE RECTANGULAR SQUARE SQUARE RECTANGULAR
Package form CHIP CARRIER IN-LINE IN-LINE CHIP CARRIER CHIP CARRIER IN-LINE CHIP CARRIER CHIP CARRIER IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.0005 A 0.002 A
Maximum slew rate 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.1 mA 0.12 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES NO NO YES YES NO YES YES NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form J BEND THROUGH-HOLE THROUGH-HOLE J BEND J BEND THROUGH-HOLE J BEND J BEND THROUGH-HOLE
Terminal pitch 1.27 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm
Terminal location QUAD DUAL DUAL QUAD QUAD DUAL QUAD QUAD DUAL
period time 65 ns 65 ns 140 ns 80 ns 100 ns 80 ns - 140 ns -
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V -
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V - 4.5 V -
Base Number Matches 1 1 1 1 1 1 - - -

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 351  2537  2748  1556  504  8  52  56  32  11 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号