FMMT597TC datasheet, PDF - EEWORLD Datasheet

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FMMT597TC: Descriptiontransistor pnp med pwr sot23-3; Categorysemiconductor Discrete semiconductor; File Size94KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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transistor pnp med pwr sot23-3

FMMT597TC Parametric

Parameter Name	Attribute value
Datasheets
FMMT597
Product Photos
SOT23
Standard Package	10,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single
Packaging	Tape & Reel (TR)
Transistor Type	PNP
Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	300V
Vce Saturation (Max) @ Ib, Ic	250mV @ 20mA, 100mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 10V
Power - Max	500mW
Frequency - Transiti	75MHz
Mounting Type	Surface Mou
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

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SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 - OCTOBER 1995

COMPLEMENTARY TYPE FMMT497

PARTMARKING DETAIL - 597

FMMT597

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Cut-Off Current

Emitter Saturation Voltages

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

VALUE

-300

-5

-1

-0.2

-200

500

-55 to +150

MAX. UNIT CONDITIONS.

V

-100

-0.25

-1.0

-0.85

100

75

10

300

nA

V

I

C

=-100

µ

A

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-250V

V

EB

=-4V

V

CES

=-250V

I

C

=-50mA, I

B

=-5mA

I

C

=-100mA,

I

B

=-20mA*

I

C

=-100mA,

I

B

=-20mA*

I

C

=-100mA,V

CE

=-10V*

I

C

=-1mA, V

CE

=-10V

I

C

=-50mA,V

CE

=-10V*

I

C

=-100mA,V

CE

=-10V*

MHz I

C

=-50mA, V

CE

=-10V

f=100MHz

pF

V

CB

=-10V, f=1MHz

UNIT

V

A

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

SYMBOL MIN.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

I

CES

V

CE(sat)

V

BE(sat)

Base-Emitter Turn-on Voltage

Static Forward Current Transfer Ratio

Transition Frequency

Output Capacitance

V

BE(on)

h

FE

f

T

C

obo

-300

-5

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for this device

3 - 145

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