www.fairchildsemi.com
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
•
•
•
•
•
•
•
•
•
Precision Fixed Operating Frequency (100/67/50kHz)
Low Start-up Current(Typ. 100uA)
Pulse by Pulse Current Limiting
Over Current Protection
Over Voltage Protection (Min. 25V)
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L
8-DIP
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
1
1. GND 2. Drain 3. V
CC
4. FB
1.6.7.8 Drain
2. GND
3. V
CC
4. FB 5. NC
Internal Block Diagram
#3 V
CC
32V
5V
Vref
Good
logic
OSC
9V
5µA
1mA
−
2.5R
1R
+
7.5V
−
+
27V
−
Thermal S/D
OVER VOLTAGE S/D
+
S
R
L.E.B
0.1V
S
R
Q
Q
Internal
bias
#2 DRAIN
SFET
(*#3 V
CC
)
(*#1.6.7.8 DRAIN)
#4 FB
(*#4 FB)
#1 GND
Power on reset
(*#2 GND)
*Asterisk - KA5M0365RN, KA5L0365RN
Rev.1.0.5
©2002 Fairchild Semiconductor Corporation
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Single Pulsed Avalanche Energy
(2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Single Pulsed Avalanche Energy
(2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
E
AS
V
CC,MAX
V
FB
P
D
Derating
T
J
T
A
T
STG
800
800
±30
12.0
3.0
2.1
95
30
-0.3 to V
SD
75
0.6
+160
-25 to +85
-55 to +150
V
V
V
A
DC
A
DC
A
DC
mJ
V
V
W
W/°C
°C
°C
°C
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
E
AS
V
CC,MAX
V
FB
P
D
Derating
T
J
T
A
T
STG
650
650
±30
12.0
3.0
2.4
358
30
-0.3 to V
SD
75
0.6
+160
-25 to +85
-55 to +150
V
V
V
A
DC
A
DC
A
DC
mJ
V
V
W
W/°C
°C
°C
°C
Symbol
Value
Unit
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C
2
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5M0365RN, KA5L0365RN
Maximum Drain Voltage
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(1)
Continuous Drain Current (Ta=25°C)
Continuous Drain Current (Ta=100°C)
Single Pulsed Avalanche Energy
(2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
V
D,MAX
V
DGR
V
GS
I
DM
I
D
I
D
E
AS
V
CC,MAX
V
FB
P
D
Derating
T
J
T
A
T
STG
650
650
±30
12.0
0.42
0.28
127
30
-0.3 to V
SD
1.56
0.0125
+160
-25 to +85
-55 to +150
V
V
V
A
DC
A
DC
A
DC
mJ
V
V
W
W/°C
°C
°C
°C
Symbol
Value
Unit
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C
3
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Note:
1.
Pulse test: Pulse width
≤
300µS, duty
≤
2%
2.
1
-
S
= ---
R
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Condition
V
GS
=0V, I
D
=50µA
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is essentially
independent of
operating temperature)
V
GS
=0V, I
D
=50µA
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is
essentially independent of
operating temperature)
Min.
650
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
3.6
-
720
40
40
150
100
150
42
-
7.3
13.3
Max.
-
50
200
4.5
-
-
-
-
-
-
-
-
34
-
-
Unit
V
µA
µA
Ω
S
pF
nS
nC
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
800
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
4.0
2.5
779
75.6
24.9
40
95
150
60
-
7.2
12.1
-
250
1000
5.0
-
-
-
-
-
-
-
-
34
-
-
V
µA
µA
Ω
S
pF
nS
nC
4
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter
KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Note:
1.
Pulse test: Pulse width
≤
300µS, duty
≤
2%
2.
1
S
= ---
-
R
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Condition
V
GS
=0V, I
D
=50µA
V
DS
=Max. Rating, V
GS
=0V
V
DS
=0.8Max. Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time is
essentially independent of
operating temperature)
Min.
650
-
-
-
2.0
-
-
-
-
-
-
-
Typ.
-
-
-
3.6
-
314.9
47
9
11.2
34
28.2
32
Max.
-
50
200
4.5
-
-
-
-
-
-
-
-
11.93
Unit
V
µA
µA
Ω
S
pF
nS
-
1.95
6.85
-
nC
5
PCB Design
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