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IRF1405ZSTRL-7P

Description
mosfet N-CH 55v 120a d2pak7
CategoryDiscrete semiconductor    The transistor   
File Size690KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF1405ZSTRL-7P Overview

mosfet N-CH 55v 120a d2pak7

IRF1405ZSTRL-7P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionSMALL OUTLINE, R-PSSO-G6
Contacts7
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)810 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)150 A
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.0049 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G6
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)590 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 96905B
AUTOMOTIVE MOSFET
IRF1405ZS-7P
IRF1405ZL-7P
Features
l
l
l
l
l
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
R
DS(on)
= 4.9mΩ
‰
G
S
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
I
D
= 120A
D
2
Pak 7 Pin
TO-263CA 7 Pin
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
150
100
120
590
230
1.5
± 20
250
810
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/°C
V
mJ
A
mJ
°C
c
h
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
j
Parameter
Typ.
–––
0.50
Max.
0.65
–––
62
40
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
Junction-to-Ambient (PCB Mount, steady state)
ij
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
12/6/06

IRF1405ZSTRL-7P Related Products

IRF1405ZSTRL-7P
Description mosfet N-CH 55v 120a d2pak7
Is it Rohs certified? incompatible
Maker International Rectifier ( Infineon )
package instruction SMALL OUTLINE, R-PSSO-G6
Contacts 7
Reach Compliance Code compliant
ECCN code EAR99
Other features AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 810 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V
Maximum drain current (Abs) (ID) 150 A
Maximum drain current (ID) 120 A
Maximum drain-source on-resistance 0.0049 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G6
JESD-609 code e0
Humidity sensitivity level 1
Number of components 1
Number of terminals 6
Operating mode ENHANCEMENT MODE
Maximum operating temperature 175 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 230 W
Maximum pulsed drain current (IDM) 590 A
Certification status Not Qualified
surface mount YES
Terminal surface TIN LEAD
Terminal form GULL WING
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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