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NTD4863NA-35G

Description
mosfet N-CH 25v 49a sgl ipak
CategoryDiscrete semiconductor    The transistor   
File Size118KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTD4863NA-35G Overview

mosfet N-CH 25v 49a sgl ipak

NTD4863NA-35G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionIN-LINE, R-PSIP-T3
Contacts3
Manufacturer packaging code369AD
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)60.5 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)9.2 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)98 A
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTD4863N
Power MOSFET
25 V, 49 A, Single N−Channel, DPAK/IPAK
Features
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
http://onsemi.com
V
(BR)DSS
25 V
14 mW @ 4.5 V
D
R
DS(ON)
MAX
9.3 mW @ 10 V
49 A
I
D
MAX
Applications
VCORE Applications
DC−DC Converters
High Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
25
±20
11.3
8.8
1.95
9.2
7.1
1.27
49
38
36.6
98
35
−55 to
+175
30.5
6
60.5
W
A
A
°C
A
V/ns
mJ
AYWW
48
63NG
W
A
4
Drain
W
A
1 2
3
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
Unit
V
V
A
4
G
N−Channel
S
4
4
1
1
2 3
2
3
3 IPAK
CASE 369AC
(Straight Lead)
IPAK
CASE 369D
(Straight Lead
DPAK) STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
48
63NG
4
Drain
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
2
1 2 3
Drain 3
1
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
A
Y
WW
4863N
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 11 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 3
Publication Order Number:
NTD4863N/D
AYWW
48
63NG

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Description mosfet N-CH 25v 49a sgl ipak mosfet N-CH 25v 9.2A ipak Power MOSFET 25V 49A 9.3 mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free
Maker ON Semiconductor ON Semiconductor ON Semiconductor
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 4 4
Manufacturer packaging code 369AD 369AA 369AA
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 60.5 mJ 60.5 mJ 60.5 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V 25 V 25 V
Maximum drain current (ID) 9.2 A 9.2 A 9.2 A
Maximum drain-source on-resistance 0.014 Ω 0.014 Ω 0.014 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 98 A 98 A 98 A
surface mount NO NO YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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