CD4049UBMS
Data Sheet
December 1992
File Number 3315
CMOS Hex Buffer/Converter
The CD4049UBMS is an inverting hex buffer and features
logic level conversion using only one supply (voltage (VCC).
The input signal high level (VIH) can exceed the VCC supply
voltage when this device is used for logic level conversions.
This device is intended for use as CMOS to DTL/TTL
converters and can drive directly two DTL/TTL loads. (VCC
= 5V, VOL
≤
0.4V, and IOL
≥
3.3mA.
The CD4049UBMS is designated as replacement for
CD4009UB. Because the CD4049UBMS requires only one
power supply, it is preferred over the CD4009UB and
CD4010B and should be used in place of the CD4009UB in
all inverter, current driver, or logic level conversion applica-
tions. In these applications the CD4049UBMS is pin compat-
ible with the CD4009UB, and can be substituted for this
device in existing as well as in new designs. Terminal No. 16
is not connected internally on the CD4049UBMS, therefore,
connection to this terminal is of no consequence to circuit
operation. For applications not requiring high sink current or
voltage conversion, the CD4069UB Hex Inverter is recom-
mended.
The CD4049UBMS is supplied in these 16 lead outline pack-
ages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4S
H1E
H3X
Features
• High Voltage Type (20V Rating)
• Inverting Type
• High Sink Current for Driving 2 TTL Loads
• High-to-Low Level Logic Conversion
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25
o
C
• 5V, 10V and 15V Parametric Ratings
Applications
• CMOS to DTL/TTL Hex Converter
• CMOS Current “Sink” or “Source” Driver
• CMOS High-to-Low Logic Level Converter
Pinout
CD4049UBMS
TOP VIEW
VCC
G=A
A
H=B
B
I=C
C
VSS
1
2
3
4
5
6
7
8
16 NC
15 L = F
14 F
13 NC
12 K = E
11 E
10 J = D
9 D
Functional Diagram
A
3
2
G=A
Schematic
VCC
B
5
4
H=B
C
7
6
I=C
IN
P
R
OUT
N
D
VCC
VSS
NC = 13
NC = 16
1
8
E
9
10
J=D
11
12
K=E
VSS
F
14
15
L=F
FIGURE 1. SCHEMATIC DIAGRAM, 1 OF 6 IDENTICAL UNITS
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
CD4049UBMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input.
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
±
1/32 Inch (1.59mm
±
0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance. . . . . . . . . . . . . . . .
θ
ja
θ
jc
o
C/W
o
C/W
Ceramic DIP and FRIT Package . . . .
80
20
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . .500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
1
2
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
3
1
2
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
3
1
2
VDD = 18V
Output Voltage
Output Voltage
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
VOL15
VOH15
IOL4
IOL5
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VNTH
VPTH
F
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
VDD = 4.5V, VOUT = 0.4V
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
Input Voltage Low
(Note 2)
Input Voltage High
(Note 2)
VIL
VIH
VIL
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
3
1, 2, 3
1, 2, 3
1
1
1
1
1
1
1
1
1
1
7
7
8A
8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
-
4.0
-
12.5
1.0
-
2.5
-
V
V
V
V
MIN
-
-
-
-100
-1000
-100
-
-
-
-
14.95
2.6
3.2
8.0
24
-
-
-
-
-2.8
0.7
MAX
2
200
2
-
-
-
100
1000
100
50
-
-
-
-
-
-0.8
-3.2
-1.8
-6.0
-0.7
2.8
UNITS
µA
µA
µA
nA
nA
nA
nA
nA
nA
mV
V
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
(NOTE 1)
VDD = 20V, VIN = VDD or GND
VOH > VOL <
VDD/2 VDD/2
NOTES: 1. All voltages referenced to device GND, 100% testing being im-
plemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit is
0.050V max.
2
CD4049UBMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
9
10, 11
Propagation Delay
TPLH
VDD = 5V, VIN = VDD or GND
9
10, 11
Transition Time
TTHL
VDD = 5V, VIN = VDD or GND
9
10, 11
Transition Time
TTLH
VDD = 5V, VIN = VDD or GND
9
10, 11
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
VDD = 5V, VIN = VDD or GND
NOTES
1, 2
TEMPERATURE
-55
o
C, +25
o
C
+125
o
C
-55
o
C, +25
o
C
+125
o
C
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL
VOL
VOH
VOH
IOL4
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 4.5V, VOUT = 0.4V
1, 2
1, 2
1, 2
1, 2
1, 2
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+125
o
C
-55
o
C
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
-55
o
C
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
-55
o
C
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-55
o
C
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-55
o
C
Input Voltage Low
Input Voltage High
VIL
VIH
VDD = 10V, VOH > 9V, VOL <
1V
VDD = 10V, VOH > 9V, VOL <
1V
1, 2
1, 2
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
-
-
-
-
-
-
4.95
9.95
1.8
3.3
2.4
4.0
5.6
10
18
26
-
-
-
-
-
-
-
-
-
8
MAX
1
30
2
60
2
120
50
50
-
-
-
-
-
-
-
-
-
-
-0.48
-0.81
-1.55
-2.6
-1.18
-2.0
-3.1
-5.2
2
-
UNITS
µA
µA
µA
µA
µA
µA
mV
mV
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
-
-
MAX
65
88
120
162
60
81
160
216
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Propagation Delay
SYMBOL
TPHL
CONDITIONS
(NOTE 1, 2)
VDD = 5V, VIN = VDD or GND
VDD = 10V, VIN = VDD or GND
1, 2
3
CD4049UBMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Propagation Delay
SYMBOL
TPHL
CONDITIONS
VIN = 10V, VDD = 5V
VIN = 10V, VDD = 10V
Propagation Delay
TPLH
VIN = 10V, VDD = 5V
VIN = 10V, VDD = 10V
Propagation Delay
TPHL
VIN = 15V, VDD = 5V
VIN = 15V, VDD = 15V
Propagation Delay
TPLH
VIN = 15V, VDD = 5V
VIN = 15V, VDD = 15V
Transition Time
TTHL
VDD = 10V, VIN = VDD OR GND
VDD = 15V, VIN = VDD OR GND
Transition Time
TTLH
VDD = 10V, VIN = VDD OR GND
VDD = 15V, VIN = VDD OR GND
Input Capacitance
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
SYMBOL
IDD
VNTH
∆VTND
VTP
∆VTPD
F
CONDITIONS
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
NOTES
1, 4
1, 4
1, 4
1, 4
1, 4
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-2.8
-
0.2
-
VOH >
VDD/2
-
MAX
7.5
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25
o
C
Limit
UNITS
µA
V
V
V
V
V
CIN
Any Input
NOTES
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
30
40
90
65
20
30
90
50
40
30
80
60
22.5
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
Supply Current - MSI-1
Output Current (Sink)
Output Current (Source)
SYMBOL
IDD
IOL5
IOH5A
±
0.2µA
±
20% x Pre-Test Reading
±
20% x Pre-Test Reading
DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
MIL-STD-883
METHOD
100% 5004
100% 5004
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
4
CD4049UBMS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
Group B
Subgroup B-5
Subgroup B-6
Group D
MIL-STD-883
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
Subgroups 1, 2, 3, 9, 10, 11
IDD, IOL5, IOH5A
READ AND RECORD
IDD, IOL5, IOH5A
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
5005
TEST
PRE-IRRAD
1, 7, 9
POST-IRRAD
Table 4
READ AND RECORD
PRE-IRRAD
1, 9
POST-IRRAD
Table 4
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
Static Burn-In 1 (Note 1)
Static Burn-In 2 (Note 1)
Dynamic Burn-In (Note 3)
Irradiation (Note 2)
NOTE:
1. Each pin except pin 1, pin 16, and GND will have a series resistor of 10K
±
5%, VDD = 18V
±
0.5V
2. Each pin except pin 1, pin 16, and GND will have a series resistor of 47K
±
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V
±
0.5V
3. Each pin except pin 1, pin 16, and GND will have a series resistor of 4.75K
±
5%, VDD = 18V
±
0.5V
OPEN
2, 4, 6, 10, 12, 13, 15
2, 4, 6, 10, 12, 13, 15
13
2, 4, 6, 10, 12, 13, 15, 16
GROUND
3, 5, 7-9, 11-14
8
8
8
VDD
1, 16
1, 3, 5, 7, 9, 11, 14, 16
1, 16
1, 3, 5, 7, 9, 11, 14
2, 4, 6, 10, 12, 15
3, 5, 7, 9, 11, 14
9V
±
-0.5V
50kHz
25kHz
Typical Performance Characteristics
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
AMBIENT TEMPERATURE (T
A
) = +25
o
C
SUPPLY VOLTAGE (VCC) = 5V
OUTPUT VOLTAGE (VO) (V)
AMBIENT TEMPERATURE (T
A
) = +25
o
C
70
15V
60
50
40
30
GATE-TO-SOURCE VOLTAGE (VGS) = 5V
20
10
10V
5
4
MINIMUM
MAXIMUM
3
2
1
0
1
2
3
INPUT VOLTAGE (VI) (V)
4
0
1
2
3
4
5
6
7
8
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER
CHARACTERISTICS
FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
5
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