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2N2907AUA

Description
transistor pnp GP hermetic smd
Categorysemiconductor    Discrete semiconductor   
File Size92KB,2 Pages
ManufacturerAll Sensors
Environmental Compliance  
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2N2907AUA Overview

transistor pnp GP hermetic smd

2N2907AUA Parametric

Parameter NameAttribute value
Datasheets
2N2907AUA
Product Photos
4-CLCC
Standard Package1
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingBulk
Transistor TypePNP
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 10V
Power - Max400mW
Frequency - Transiti-
Mounting TypeSurface Mou
Package / Case4-CLCC
Supplier Device PackageCeramic SMD

2N2907AUA Related Products

2N2907AUA
Description transistor pnp GP hermetic smd
Standard Package 1
Category Discrete Semiconductor Products
Family Transistors (BJT) - Single
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 10V
Power - Max 400mW
Mounting Type Surface Mou
Package / Case 4-CLCC
Supplier Device Package Ceramic SMD

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