ATC100E200MTN7200T datasheet, PDF

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ATC100E200MTN7200T: DescriptionCeramic Capacitor, Multilayer, Porcelain, 7200V, 20% +Tol, 20% -Tol, 90ppm/Cel TC, 0.00002uF, 3838,; CategoryPassive components capacitor; File Size416KB，6 Pages; ManufacturerATC [American Technical Ceramics]; Environmental Compliance

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ATC100E200MTN7200T Overview

Ceramic Capacitor, Multilayer, Porcelain, 7200V, 20% +Tol, 20% -Tol, 90ppm/Cel TC, 0.00002uF, 3838,

ATC100E200MTN7200T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	842785448
package instruction	, 3838
Reach Compliance Code	compliant
ECCN code	EAR99
capacitance	0.00002 µF
Capacitor type	CERAMIC CAPACITOR
dielectric materials	PORCELAIN
high	4.32 mm
length	9.65 mm
multi-layer	Yes
negative tolerance	20%
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package form	SMT
method of packing	TR
positive tolerance	20%
Rated (DC) voltage (URdc)	7200 V
series	100E(CHIP)
size code	3838
Temperature Coefficient	90ppm/Cel ppm/°C
width	9.65 mm

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ATC 100 E Series

Porcelain High RF Power

Multilayer Capacitors

• Case E Size

(.380" x .380")

• High Q

• Low ESR/ESL

• High RF Power

• Extended WVDC

up to 7200 VDC

• Capacitance Range

1 pF to 5100 pF

• Ultra-Stable Performance

• High RF Current/Voltage

• High Reliability

• Available with

Encapsulation Option*

ELECTRICAL AND MECHANICAL

SPECIFICATIONS

QUALITY FACTOR (Q):

Greater than 10,000 (1 pF to 1000 pF) @ 1 MHz.

Greater than 10,000 (1100 pF to 5100 pF) @ 1 KHz.

ATC, the industry leader, offers new improved ESR/ESL performance

for the 100 E Series RF Capacitors. This high Q multilayer capacitor

is ultra-stable under high RF current and voltage applications. High

density porcelain construction provides a rugged, hermetic package.

ATC offers an encapsulation option for applications requiring ex-

tended protection agains arc-over and corona.

Typical functional applications: Bypass, Coupling, Tuning, Imped-

ance Matching and DC Blocking.

Typical circuit applications: HF/RF Power Amplifiers, Transmitters,

Antenna Tuning, Plasma Chambers and Medical (MRI coils).

*For leaded styles only

TEMPERATURE COEFFICIENT OF CAPACITANCE (TCC):

+90 ±30 PPM/°C (-55°C to +125°C)

INSULATION RESISTANCE (IR):

1 pF to 5100 pF:

Megohms min. @ +25°C at 500 VDC.

Megohms min. @ +125°C at 500 VDC.

WORKING VOLTAGE (WVDC):

See Capacitance Values Table, page 2.

DIELECTRIC WITHSTANDING VOLTAGE (DWV):

250% of WVDC for capacitors rated at 500 volts DC or less for 5 seconds.

150% of WVDC for capacitors rated at 1250 volts DC or less for 5 seconds.

120% of WVDC for capacitors rated above 1250 volts DC for 5 seconds.

RETRACE:

Less than ±(0.02% or 0.02 pF), whichever is greater.

ENVIRONMENTAL TESTS

ATC 100 E Series Capacitors are designed and manufactured to

meet and exceed the requirements of EIA-198, MIL-PRF-55681

and MIL-PRF-123.

THERMAL SHOCK:

MIL-STD-202, Method 107, Condition A.

AGING EFFECTS:

None

PIEZOELECTRIC EFFECTS:

None

(No capacitance variation with voltage or pressure).

MOISTURE RESISTANCE:

MIL-STD-202, Method 106.

LOW VOLTAGE HUMIDITY:

MIL-STD-202, Method 103, Condition A, with 1.5 Volts DC ap-

plied while subjected to an environment of 85°C with 85% rela-

tive humidity for 240 hours min.

CAPACITANCE DRIFT:

±(0.02% or 0.02 pF), whichever is

greater.

OPERATING TEMPERATURE RANGE:

From -55°C to +125°C (No derating of working voltage).

LIFE TEST:

MIL-STD-202, Method 108, for 2000 hours, at 125°C.

Voltage applied.

200% of WVDC for capacitors rated at 500 volts DC or less.

120% of WVDC for capacitors rated at 1250 volts DC or less.

100% of WVDC for capacitors rated above 1250 volts DC.

TERMINATION STYLES:

Available in various surface mount and leaded styles.

See Mechanical Configurations, page 3.

TERMINAL STRENGTH:

Terminations for chips and pellets

withstand a pull of 10 lbs. min., 25 lbs. typical, for 5 seconds in

direction perpendicular to the termination surface of the capaci-

tor. Test per MIL-STD-202, method 211.

ATC # 001-809 Rev. M, 9/14

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