MITSUBISHI IGBT MODULES
CM300DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
M
P - DIA.
(4 TYP.)
C2E1
E2
C1
E2 C2
R
L
D
C
F
C1 E1
R
G
S - M6 THD.
(3 TYP)
N
K
K
G
H
TAB#110 t=0.5
Q
N
K
E
J
N
E2
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM300DY-
24H is a 1200V (V
CES
), 300 Am-
pere Dual IGBT Module.
Type
CM
Current Rating
Amperes
300
V
CES
Volts (x 50)
24
C2E1
E2
C1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
4.33
3.661±0.01
3.15
2.441±0.01
1.18 Max.
1.18
0.98
0.85
0.83
Millimeters
110.0
93.0±0.25
80.0
62.0±0.25
30.0 Max.
30.0
25.0
21.5
21.2
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.71
0.59
0.55
0.28
0.26 Dia.
0.33
0.24
M6 Metric
Millimeters
18.0
15.0
14.0
7.0
Dia. 6.5
8.5
6.0
M6
C1
E1
C2
Sep.1998
MITSUBISHI IGBT MODULES
CM300DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
C
= 25°C)
Peak Collector Current
Emitter Current** (T
C
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
C
= 25°C, T
j
≤
150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM300DY-24H
–40 to 150
–40 to 125
1200
±20
300
600*
300
600*
2100
1.96 ~ 2.94
1.96 ~ 2.94
500
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 30mA, V
CE
= 10V
I
C
= 300A, V
GE
= 15V
I
C
= 300A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Emitter-Collector Voltage
V
CC
= 600V, I
C
= 300A, V
GE
= 15V
I
E
= 300A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.5
2.25
1500
–
Max.
1.0
0.5
7.5
3.4**
–
–
3.5
Units
mA
µA
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 300A, di
E
/dt = –600A/µs
I
E
= 300A, di
E
/dt = –600A/µs
V
CC
= 600V, I
C
= 300A,
V
GE1
= V
GE2
= 15V, R
G
= 1.0Ω
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
2.23
Max.
60
21
12
250
500
350
350
250
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.06
0.12
0.035
Units
°C/W
°C/W
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM300DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
600
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
600
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
V
GE
= 20V
15
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
12
480
T
j
= 25
o
C
11
480
4
360
10
360
3
240
240
2
120
7
9
8
120
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
120
240
360
480
600
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
8
7
5
3
2
T
j
= 25°C
10
2
C
ies
I
C
= 600A
10
1
6
C
oes
I
C
= 300A
10
2
7
5
3
2
4
C
res
10
0
2
I
C
= 120A
V
GE
= 0V
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
1.0
1.5
2.0
2.5
3.0
3.5
10
-1
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
t
d(off)
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 300A
t
f
SWITCHING TIME, (ns)
16
t
d(on)
I
rr
V
CC
= 400V
V
CC
= 600V
10
2
10
2
t
rr
12
10
1
8
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 1Ω
T
j
= 125°C
di/dt = -600A/µsec
T
j
= 25°C
4
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
0
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
600
1200
1800
2400
GATE CHARGE, Q
G
, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM300DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.06°C/W
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
-2
10
-1
10
0
10
1
10
-3
10
1
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.12°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
Sep.1998
Industrial Control Electronics
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