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IRL3716

Description
HEXFET Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size229KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRL3716 Overview

HEXFET Power MOSFET

IRL3716 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)640 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)180 A
Maximum drain current (ID)180 A
Maximum drain-source on-resistance0.004 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)210 W
Maximum pulsed drain current (IDM)720 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 94403A
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Active Oring
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
P
D
@T
C
IRL3716
IRL3716S
IRL3716L
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
4.0mΩ
I
D
180A
†
TO-220AB
IRL3716
D
2
Pak
IRL3716S
TO-262
IRL3716L
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
ƒ
Maximum Power Dissipation
ƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
180
†
130
720
210
100
1.4
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
= 25°C
= 100°C
= 25°C
= 100°C
T
J
, T
STG
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case‡
Case-to-Sink, Flat, Greased Surface
„
Junction-to-Ambient
„
Junction-to-Ambient (PCB mount)
…
Typ.
–––
0.50
–––
–––
Max.
0.72
–––
62
40
Units
°C/W
Notes

through
‡
are on page 11
www.irf.com
1
10/8/04

IRL3716 Related Products

IRL3716 IRL3716L IRL3716S
Description HEXFET Power MOSFET HEXFET Power MOSFET HEXFET Power MOSFET
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3
Reach Compliance Code compli compli unknow
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 640 mJ 640 mJ 640 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V 20 V
Maximum drain current (ID) 180 A 180 A 180 A
Maximum drain-source on-resistance 0.004 Ω 0.004 Ω 0.004 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSIP-T3 R-PSSO-G2
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 225 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 720 A 720 A 720 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? incompatible incompatible -
Parts packaging code TO-220AB TO-262AA -
Maximum drain current (Abs) (ID) 180 A 180 A -
JEDEC-95 code TO-220AB TO-262AA -
Maximum operating temperature 175 °C 175 °C -
Maximum power dissipation(Abs) 210 W 210 W -

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