PD - 94403A
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Active Oring
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
P
D
@T
C
IRL3716
IRL3716S
IRL3716L
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
4.0mΩ
I
D
180A
TO-220AB
IRL3716
D
2
Pak
IRL3716S
TO-262
IRL3716L
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
180
130
720
210
100
1.4
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
= 25°C
= 100°C
= 25°C
= 100°C
T
J
, T
STG
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
0.72
–––
62
40
Units
°C/W
Notes
through
are on page 11
www.irf.com
1
10/8/04
IRL3716/3716S/3716L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
Conditions
–––
––– V
V
GS
= 0V, I
D
= 250µA
0.021 ––– V/°C Reference to 25°C, I
D
= 1mA
3.0
4.0
V
GS
= 10V, I
D
= 90A
mΩ
4.0
4.8
V
GS
= 4.5V, I
D
= 72A
–––
3.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
20
V
DS
= 16V, V
GS
= 0V
µA
–––
250
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
–––
200
V
GS
= 16V
nA
––– -200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Conditions
100 ––– –––
S
V
DS
= 10V, I
D
= 72A
–––
53
79
I
D
= 72A
–––
17
26
nC V
DS
= 16V
–––
24
35
V
GS
= 4.5V
–––
50
75
V
GS
= 0V, V
DS
= 10V
1.5
18
140
38
36
5090
3440
560
–––
–––
–––
–––
–––
–––
–––
Ω
ns
V
DD
= 10V
I
D
= 72A
R
G
= 3.9Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
640
72
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
––– 180
–––
0.93
0.80
180
87
190
85
720
1.3
–––
280
130
280
130
V
ns
nC
ns
nC
A
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 72A, V
GS
= 0V
T
J
= 125°C, I
S
= 72A, V
GS
= 0V
T
J
= 25°C, I
F
= 72A, V
R
=20V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 72A, V
R
=20V
di/dt = 100A/µs
2
www.irf.com
IRL3716/3716S/3716L
10000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
10000
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
100
100
2.5V
10
10
2.5V
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.0
I
D
= 180A
ID, Drain-to-Source Current
(Α
)
T J = 25°C
T J = 175°C
R
DS(on)
, Drain-to-Source On Resistance
1.5
100.00
(Normalized)
1.0
0.5
10.00
2.0
3.0
4.0
VDS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRL3716/3716S/3716L
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
10000
V
GS
, Gate-to-Source Voltage (V)
16
I
D
=
72A
V
DS
= 16V
12
C, Capacitance(pF)
Ciss
Coss
8
1000
Crss
4
100
1
10
100
0
0
30
60
90
120
150
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 175
°
C
10
T = 25
°
C
J
ID , Drain-to-Source Current (A)
1000
I
SD
, Reverse Drain Current (A)
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10msec
1
V
GS
= 0 V
0.1
0.2
0.8
1.4
2.0
2.6
1
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRL3716/3716S/3716L
180
V
DS
LIMITED BY PACKAGE
R
D
150
V
GS
R
G
D.U.T.
+
120
-
V
DD
I
D
, Drain Current (A)
4.5V
90
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
60
Fig 10a.
Switching Time Test Circuit
V
DS
90%
30
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
1
Thermal Response
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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