EEWORLDEEWORLDEEWORLD

Part Number

Search

IRL3716S

Description
HEXFET Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size229KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRL3716S Overview

HEXFET Power MOSFET

IRL3716S Parametric

Parameter NameAttribute value
MakerInternational Rectifier ( Infineon )
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)640 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)180 A
Maximum drain-source on-resistance0.004 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)720 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 94403A
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Active Oring
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
P
D
@T
C
IRL3716
IRL3716S
IRL3716L
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
4.0mΩ
I
D
180A
†
TO-220AB
IRL3716
D
2
Pak
IRL3716S
TO-262
IRL3716L
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
ƒ
Maximum Power Dissipation
ƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
180
†
130
720
210
100
1.4
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
= 25°C
= 100°C
= 25°C
= 100°C
T
J
, T
STG
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case‡
Case-to-Sink, Flat, Greased Surface
„
Junction-to-Ambient
„
Junction-to-Ambient (PCB mount)
…
Typ.
–––
0.50
–––
–––
Max.
0.72
–––
62
40
Units
°C/W
Notes

through
‡
are on page 11
www.irf.com
1
10/8/04

IRL3716S Related Products

IRL3716S IRL3716 IRL3716L
Description HEXFET Power MOSFET HEXFET Power MOSFET HEXFET Power MOSFET
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code unknow compli compli
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 640 mJ 640 mJ 640 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V 20 V
Maximum drain current (ID) 180 A 180 A 180 A
Maximum drain-source on-resistance 0.004 Ω 0.004 Ω 0.004 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSIP-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Celsius) 260 225 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 720 A 720 A 720 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO NO
Terminal surface TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? - incompatible incompatible
Parts packaging code - TO-220AB TO-262AA
Maximum drain current (Abs) (ID) - 180 A 180 A
JEDEC-95 code - TO-220AB TO-262AA
Maximum operating temperature - 175 °C 175 °C
Maximum power dissipation(Abs) - 210 W 210 W
Ask a question about AVR timer interrupt
#pragma interrupt_handler timer1_capt_isr:12 void timer1_capt_isr(void) { Service program; ETIMSK=0B00000100; TCNT3=10000; } #pragma interrupt_handler timer3_ovf_isr:30 void timer3_ovf_isr(void) { Ser...
zhangquanchang Microchip MCU
Ding~ There are new products in the mobile station's inventory~ Welcome everyone to borrow them! !
{:1_102:}[size=3]Happily, our EEWORLD mobile stations have further expanded in number with the support of all netizens~~[/size] [size=3] [/size] [size=3]Currently, there are 61 development boards~Ever...
okhxyyo Talking
A fourth-order elliptic low-pass filter
I made a fourth-order elliptic filter using Filter Solution. The Fc is 100KHz. After fine-tuning the capacitors and resistors, I used Multisim to simulate and measure that the Fc is 105KHz. However, w...
suzixxs Analog electronics
Software design of nios
Does anyone know how to design FPGA in nios? I have a question. Where can I find the detailed description of altera_avalon_pio_regs.h? Also, UART TIMER, etc....
heningbo FPGA/CPLD
Ask for advice from all the heroes
I just started using stm32. Can I use the v2.0 firmware library to develop the stm32f107RB USB slave device? I can't understand the USB-OTG-FS in the v3.0 library. Please help me....
天马行风 stm32/stm8
Analysis on the white-label tablet market and business model
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:53[/i] NPD DisplaySearch Shanghai Office, May 20, 2014---The tablet market has been a hot topic in 2013. The good market growth, the im...
azhiking Mobile and portable

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1908  1090  2569  458  776  39  22  52  10  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号