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IRLU3802PBF

Description
30 A, 12 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
CategoryDiscrete semiconductor    The transistor   
File Size279KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRLU3802PBF Overview

30 A, 12 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

IRLU3802PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-251AA
package instructionLEAD FREE, IPAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)84 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)88 W
Maximum pulsed drain current (IDM)320 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95089A
IRLR3802PbF
IRLU3802PbF
Applications
l
High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters
l
Power Management for Netcom,
Computing and Portable Applications.
l
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
HEXFET
®
Power MOSFET
V
DSS
12V
R
DS(on)
max
8.5mΩ
Q
g
27nC
D-Pak
IRLR3802
I-Pak
IRLU3802
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
± 12
84
„
60„
320
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.7
40
110
Units
°C/W
Notes

through
„
are on page 9
www.irf.com
1
12/7/04

IRLU3802PBF Related Products

IRLU3802PBF IRLR3802PBF
Description 30 A, 12 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 30 A, 12 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-251AA TO-252AA
package instruction LEAD FREE, IPAK-3 LEAD FREE, DPAK-3
Contacts 3 3
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 300 mJ 300 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (Abs) (ID) 84 A 84 A
Maximum drain current (ID) 30 A 30 A
Maximum drain-source on-resistance 0.03 Ω 0.03 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AA TO-252AA
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 88 W 88 W
Maximum pulsed drain current (IDM) 320 A 320 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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