MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CM600E2Y-34H
q
I
C ...................................................................
600A
q
V
CES .......................................................
1700V
q
Insulated Type
q
1-elements in a pack (for brake)
APPLICATION
DC choppers, Dynamic braking choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57
±0.25
57
±0.25
4 - M8 NUTS
E1
E1
20
C2
G1
E1
C2
124
±0.25
140
30
C1
C1
E2
CM
C1
E2
E1
G1
C1
C2
G2
E2
CIRCUIT DIAGRAM
16
3 - M4 NUTS
40
53
55.2
11.85
6 -
φ
7
MOUNTING HOLES
5
35
11.5
14
38
31.5
28
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
5
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
(Tj = 25
°
C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
V
GE
= 0V
V
CE
= 0V
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C, IGBT part
Conditions
Ratings
1700
±20
600
1200
600
1200
6200
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
(Note 1)
(Note 1)
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr (Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
V
FM
t
rr
Q
rr
R
th(j-c)
R
th(c-f)
Note 1.
2.
3.
4.
Item
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 60mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 600A, V
GE
= 15V
T
j
= 125°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 850V, I
C
= 600A, V
GE
= 15V
V
CC
= 850V, I
C
= 600A
V
GE1
= V
GE2
= 15V
R
G
= 3.3Ω
Resistive load switching operation
I
E
= 600A, V
GE
= 0V
I
E
= 600A
die / dt = –1200A /
µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 1/2 module)
I
F
= 600A, Clamp diode part
I
F
= 600A
di
f
/ dt = –1200A /
µs,
Clamp diode part
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/2 module)
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
5.5
—
2.75
3.30
70
10.0
3.8
3.3
—
—
—
—
2.40
—
100
—
—
0.016
2.50
—
100
—
0.016
Max
12
6.5
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.020
0.064
—
3.25
2.00
—
0.064
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
V
µs
µC
K/W
K/W
(Note 4)
Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Junction temperature (T
j
) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
T
j
= 25°C
V
GE
= 14V
1000
V
GE
= 15V
V
GE
= 20V
800
V
GE
= 12V
V
GE
= 11V
V
GE
= 13V
V
GE
= 10V
TRANSFER CHARACTERISTICS
(TYPICAL)
1200
V
CE
= 10V
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
1000
800
600
400
200
0
T
j
= 25°C
T
j
= 125°C
600
400
200
0
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
0
2
4
6
8
10
0
4
8
12
16
20
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
5
V
GE
= 15V
10
T
j
= 25°C
I
C
= 1200A
4
8
3
6
I
C
= 600A
2
4
1
T
j
= 25°C
T
j
= 125°C
2
I
C
= 240A
0
0
200
400
600
800
1000 1200
0
0
4
8
12
16
20
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
3
7
5
3
2
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
EMITTER CURRENT I
E
(A)
10
4
7
5
3
2
T
j
= 25°C
10
3
7 V
GE
= 0V, T
j
= 25°C
5 C
ies,
C
oes
: f = 100kHz
3 C
res
: f = 1MHz
2
10
2
7
5
3
2
C
ies
10
2
7
5
3
2
10
1
10
1
7
5
3
2
C
oes
C
res
0
1
2
3
4
5
10
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Feb. 2000
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
REVERSE RECOVERY TIME t
rr
(
µs
)
SWITCHING TIMES (
µs
)
V
CC
= 850V, V
GE
=
±15V
3 R
G
= 3.3Ω, T
j
= 125°C
2 Inductive load
10
0
7
5
3
2
10
–1
7
5
t
d(off)
t
d(on)
t
r
t
f
5 7 10
2
2 3
5 7 10
3
2 3
5
10
–1
7
5
5 7 10
2
2 3
5 7 10
3
2 3
5
10
2
7
5
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
Single Pulse
T
C
= 25°C
R
th(j – c)
= 0.080°C/W
(Per 1/2 module)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
Single Pulse
T
C
= 25°C
R
th(j – c)
= 0.032°C/W
(Per 1/2 module)
10
–2
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
V
GE
– GATE CHARGE
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
V
CC
= 850V
I
C
= 600A
16
12
8
4
0
0
1000
2000
3000
4000
5000
GATE CHARGE Q
G
(nC)
Feb. 2000
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
V
CC
= 850V, T
j
= 25°C
3 Inductive load
3
2 V
GE
=
±15V,
R
G
= 3.3Ω
2
t
rr
10
0
10
3
7
7
5
5
I
rr
3
3
2
2
Embedded System
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