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F1T1A0G

Description
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size511KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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F1T1A0G Overview

Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon,

F1T1A0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1329828807
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
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