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3DD13001-A

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size530KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

3DD13001-A Overview

Small Signal Bipolar Transistor

3DD13001-A Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompliant
Base Number Matches1
3DD13001
Elektronische Bauelemente
0.2A , 600V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
A
TO-92
D
B
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
3DD13001-A
17~23
3DD13001-B
20~26
G
H
E
C
F
3
Emitter
J
1
Base
2
Collector
3
Emitter
Millimeter
Min.
Max.
0.30
0.51
1.27 TYP.
1.10
1.40
2.42
2.66
0.36
0.76
1
Base
Collector
REF.
A
B
C
D
E
2
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
REF.
F
G
H
J
K
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
600
400
7
0.2
750
150, -55~150
Unit
V
V
V
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
Storage time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
t
F
t
S
Min.
600
400
7
-
-
-
17
5
-
-
8
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
200
100
26
-
0.5
1.2
-
0.3
1.5
Unit
V
V
V
µA
µA
Test Condition
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=600V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
=20V, I
C
=20mA
V
CE
=10V, I
C
=0.25mA
I
C
=50mA, I
B
=10mA
I
C
=50mA, I
B
=10mA
V
CE
=20V, I
C
=20mA, f =1MHz
I
B1
= -I
B2
=5mA
V
CC
=45V, I
C
=50mA
V
V
MHz
µs
µs
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Aug-2011 Rev. A
Page 1 of 2

3DD13001-A Related Products

3DD13001-A 3DD13001-A-C 3DD13001-B 3DD13001-B-C 3DD13001-C
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Maker SECOS SECOS SECOS SECOS SECOS
Reach Compliance Code compliant compliant compliant compliant compliant
Base Number Matches 1 1 1 1 1
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