3DD13001-A-C datasheet, PDF - EEWORLD Datasheet

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3DD13001-A-C: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size530KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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3DD13001-A-C Overview

Small Signal Bipolar Transistor

3DD13001-A-C Parametric

Parameter Name	Attribute value
Maker	SECOS
Reach Compliance Code	compliant
Base Number Matches	1

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3DD13001

Elektronische Bauelemente

0.2A , 600V

NPN Plastic-Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Power switching applications

A

TO-92

D

B

CLASSIFICATION OF h

FE(1)

Product-Rank

Range

3DD13001-A

17~23

3DD13001-B

20~26

G

H

E

C

F

3

Emitter

J

1

Base

2

Collector

3

Emitter

Millimeter

Min.

Max.

0.30

0.51

1.27 TYP.

1.10

1.40

2.42

2.66

0.36

0.76

1

Base

Collector

REF.

A

B

C

D

E

2

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

REF.

F

G

H

J

K

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Rating

600

400

7

0.2

750

150, -55~150

Unit

V

A

mW

°

C

ELECTRICAL CHARACTERISTICS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

Emitter Cut – Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Fall time

Storage time

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE (1)

h

FE (2)

V

CE(sat)

V

BE(sat)

f

T

t

F

t

S

Min.

600

400

7

-

17

5

-

8

-

Typ.

-

Max.

-

100

200

100

26

-

0.5

1.2

-

0.3

1.5

Unit

V

µA

Test Condition

I

C

=0.1mA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=0.1mA, I

C

=0

V

CB

=600V, I

E

=0

V

CE

=400V, I

B

=0

V

EB

=7V, I

C

=0

V

CE

=20V, I

C

=20mA

V

CE

=10V, I

C

=0.25mA

I

C

=50mA, I

B

=10mA

I

C

=50mA, I

B

=10mA

V

CE

=20V, I

C

=20mA, f =1MHz

I

B1

= -I

B2

=5mA

V

CC

=45V, I

C

=50mA

V

MHz

µs

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

19-Aug-2011 Rev. A

Page 1 of 2

3DD13001-A-C Related Products

	3DD13001-A-C	3DD13001-A	3DD13001-B	3DD13001-B-C	3DD13001-C
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
Maker	SECOS	SECOS	SECOS	SECOS	SECOS
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Base Number Matches	1	1	1	1	1

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