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3DD13001-B

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size530KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

3DD13001-B Overview

Small Signal Bipolar Transistor

3DD13001-B Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompliant
Base Number Matches1
3DD13001
Elektronische Bauelemente
0.2A , 600V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
A
TO-92
D
B
CLASSIFICATION OF h
FE(1)
Product-Rank
Range
3DD13001-A
17~23
3DD13001-B
20~26
G
H
E
C
F
3
Emitter
J
1
Base
2
Collector
3
Emitter
Millimeter
Min.
Max.
0.30
0.51
1.27 TYP.
1.10
1.40
2.42
2.66
0.36
0.76
1
Base
Collector
REF.
A
B
C
D
E
2
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
REF.
F
G
H
J
K
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
600
400
7
0.2
750
150, -55~150
Unit
V
V
V
A
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
Storage time
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
f
T
t
F
t
S
Min.
600
400
7
-
-
-
17
5
-
-
8
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
200
100
26
-
0.5
1.2
-
0.3
1.5
Unit
V
V
V
µA
µA
Test Condition
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=600V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
=20V, I
C
=20mA
V
CE
=10V, I
C
=0.25mA
I
C
=50mA, I
B
=10mA
I
C
=50mA, I
B
=10mA
V
CE
=20V, I
C
=20mA, f =1MHz
I
B1
= -I
B2
=5mA
V
CC
=45V, I
C
=50mA
V
V
MHz
µs
µs
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Aug-2011 Rev. A
Page 1 of 2

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Maker SECOS SECOS SECOS SECOS SECOS
Reach Compliance Code compliant compliant compliant compliant compliant
Base Number Matches 1 1 1 1 1
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