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MSD50-08

Description
diode bridge 3ph 800v 50a sm1
CategoryDiscrete semiconductor    diode   
File Size201KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MSD50-08 Overview

diode bridge 3ph 800v 50a sm1

MSD50-08 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionR-XUFM-D5
Contacts5
Manufacturer packaging codeCASE M1
Reach Compliance Codecompli
ECCN codeEAR99
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeR-XUFM-D5
Maximum non-repetitive peak forward current420 A
Number of components6
Phase3
Number of terminals5
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current50 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
MSD50
Glass Passivated Three
Phase Rectifier Bridge
V
RRM
800 to 1800V
I
D
50 Amp
Applications
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
Circuit
3
Features
Three phase bridge rectifier
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
Glass passivated chip
MSD
1
7
2
4
Module Type
TYPE
MSD50-08
MSD50-12
MSD50-16
MSD50-18
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
ID
IFSM
it
Visol
Tvj
Tstg
Ms
Weight
2
Conditions
Tc=85℃
t=10mS Tvj =45℃
t=10mS Tvj =45℃
a.c.50Hz;r.m.s.;1min
Values
50
420
880
3000
-40 to 150
-40 to 125
Units
A
A
A
2
s
V
Nm
g
To heatsink(M5)
Module
3±5%
78
Thermal Characteristics
Symbol
Conditions
Rth(j-c)
Rth(c-s)
Per diode
Module
Values
1.5
0.2
Units
℃/W
℃/W
Electrical Characteristics
Symbol
VFM
IRD
Conditions
T=25℃ IFM =100A
Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
Values
1.5
≤0.2
≤3
Units
V
mA
mA
www.microsemi.com
MSD50 – Rev 0
Dec, 2009
1/4

MSD50-08 Related Products

MSD50-08 MSD50-16 MSD50-18
Description diode bridge 3ph 800v 50a sm1 diode bridge 1600v 50a M1 mod bridge 3ph 1800v 50a M1
Maker Microsemi Microsemi Microsemi
package instruction R-XUFM-D5 R-XUFM-D5 R-XUFM-D5
Contacts 5 5 5
Manufacturer packaging code CASE M1 CASE M1 CASE M1
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Minimum breakdown voltage 800 V 1600 V 1800 V
Configuration BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.5 V 1.5 V 1.5 V
JESD-30 code R-XUFM-D5 R-XUFM-D5 R-XUFM-D5
Maximum non-repetitive peak forward current 420 A 420 A 420 A
Number of components 6 6 6
Phase 3 3 3
Number of terminals 5 5 5
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 50 A 50 A 50 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 1600 V 1800 V
surface mount NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER
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