MSD50-16 datasheet, PDF - EEWORLD Datasheet

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MSD50-16: Descriptiondiode bridge 1600v 50a M1; CategoryDiscrete semiconductor diode; File Size201KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MSD50-16 Overview

diode bridge 1600v 50a M1

MSD50-16 Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	R-XUFM-D5
Contacts	5
Manufacturer packaging code	CASE M1
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	1600 V
Configuration	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JESD-30 code	R-XUFM-D5
Maximum non-repetitive peak forward current	420 A
Number of components	6
Phase	3
Number of terminals	5
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	50 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1600 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER

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MSD50

Glass Passivated Three

Phase Rectifier Bridge

V

RRM

800 to 1800V

I

D

50 Amp

Applications

Three phase rectifiers for power supplies

Rectifiers for DC motor field supplies

Battery charger rectifiers

Input rectifiers for variable frequency drives

Circuit

3

Features

Three phase bridge rectifier

Blocking voltage:800 to 1800V

Heat transfer through aluminum oxide DCB

ceramic isolated metal baseplate

Glass passivated chip

MSD

1

7

2

4

Module Type

TYPE

MSD50-08

MSD50-12

MSD50-16

MSD50-18

V

RRM

800V

1200V

1600V

1800V

V

RSM

900V

1300V

1700V

1900V

Maximum Ratings

Symbol

ID

IFSM

it

Visol

Tvj

Tstg

Ms

Weight

2

Conditions

Tc=85℃

t=10mS Tvj =45℃

a.c.50Hz;r.m.s.;1min

Values

50

420

880

3000

-40 to 150

-40 to 125

Units

A

2

s

V

℃

Nm

g

To heatsink(M5)

Module

3±5%

78

Thermal Characteristics

Symbol

Conditions

Rth(j-c)

Rth(c-s)

Per diode

Module

Values

1.5

0.2

Units

℃/W

Electrical Characteristics

Symbol

VFM

IRD

Conditions

T=25℃ IFM =100A

Tvj =25℃ VRD=VRRM

Tvj =150℃ VRD=VRRM

Values

1.5

≤0.2

≤3

Units

V

mA

www.microsemi.com

MSD50 – Rev 0

Dec, 2009

1/4

MSD50-16 Related Products

	MSD50-16	MSD50-18	MSD50-08
Description	diode bridge 1600v 50a M1	mod bridge 3ph 1800v 50a M1	diode bridge 3ph 800v 50a sm1
Maker	Microsemi	Microsemi	Microsemi
package instruction	R-XUFM-D5	R-XUFM-D5	R-XUFM-D5
Contacts	5	5	5
Manufacturer packaging code	CASE M1	CASE M1	CASE M1
Reach Compliance Code	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99
Minimum breakdown voltage	1600 V	1800 V	800 V
Configuration	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V	1.5 V	1.5 V
JESD-30 code	R-XUFM-D5	R-XUFM-D5	R-XUFM-D5
Maximum non-repetitive peak forward current	420 A	420 A	420 A
Number of components	6	6	6
Phase	3	3	3
Number of terminals	5	5	5
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Maximum output current	50 A	50 A	50 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1600 V	1800 V	800 V
surface mount	NO	NO	NO
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER

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