H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
September 2009
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM
Phototransistor Optocouplers
Features
■
H11AV1M and H11AV2M feature 0.3" input-output
■
■
■
■
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 6-pin dual in-line white package.
lead spacing
H11AV1AM and H11AV2AM feature 0.4" input-output
lead spacing
UL recognized (File #E90700, Vol. 2)
VDE recognized (File #102497)
Add option V (e.g., H11AV1AVM)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Schematic
ANODE
1
6
BASE
Package Outlines
CATHODE
2
5
COLLECTOR
H11AV1SM, H11AV2SM
N/C
3
4
EMITTER
H11AV1M, H11AV2M
H11AV1AM, H11AV2AM
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
V
CBO
V
ECO
P
D
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Storage Temperature
Operating Temperature
Parameter
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
60
6
120
1.41
70
70
7
150
1.76
Units
°C
°C
°C
mW
mW/°C
mA
V
mW
mW/°C
V
V
V
mW
mW/°C
Wave Solder Temperature (see page 8 for reflow solder profiles)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
DC / Average Forward Input Current
Reverse Input Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
2
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
Input Forward Voltage (I
F
= 10mA)
T
A
= 25°C
T
A
= -55°C
T
A
= 100°C
I
R
DETECTOR
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I
C
= 1.0mA, I
F
= 0
I
C
= 100µA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 10V, I
F
= 0
V
CB
= 10V
V
CE
= 0V, f = 1MHz
70
70
7
100
120
10
1
0.5
8
50
V
V
V
nA
nA
pF
Reverse Leakage Current
V
R
= 6.0V
0.8
0.9
0.7
1.18
1.28
1.05
1.5
1.7
1.4
10
µA
V
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
Transfer Characteristics
Symbol
CTR
Parameter
Current Transfer Ratio,
Collector to Emitter
Test Conditions
I
F
= 10mA, V
CE
= 10V
Device
H11AV1M
H11AV1AM
H11AV2M
H11AV2AM
Min.
100
50
Typ.*
Max.
300
Unit
%
DC CHARACTERISTIC
V
CE (SAT)
Collector-Emitter
Saturation Voltage
AC CHARACTERISTIC
T
ON
T
ON
Non-Saturated Turn-on
Time
Non Saturated Turn-off
Time
I
C
= 2mA, I
F
= 20mA
All
0.4
V
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
I
C
= 2mA, V
CC
= 10V,
R
L
= 100
Ω
(Fig. 11)
All
All
15
15
µs
µs
Isolation Characteristics
Symbol
V
ISO
C
ISO
R
ISO
Parameters
Input-Output Isolation Voltage
Isolation Capacitance
Isolation Resistance
Test Conditions
f = 60Hz, t = 1 sec.
V
I-O
= 0V, f = 1MHz
V
I-O
= 500 VDC
Min.
7500
Typ.*
0.2
Max.
2
Units
V
AC(pk)
pF
Ω
10
11
*Typical values at T
A
= 25°C
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
3
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV
I-IV
55/100/21
2
175
1594
V
peak
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V
peak
V
IORM
V
IOTM
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
850
6000
7
7
0.5
10
9
V
peak
V
peak
mm
mm
mm
Ω
RIO
Insulation Resistance at Ts, V
IO
= 500V
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
4
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.4
1.2
V
CE
= 5.0V
T
A
= 25°C
Normalized to
I
F
= 10mA
Fig. 2 Normalized CTR vs. Forward Current
V
F
– FORWARD VOLTAGE (V)
1.6
NORMALIZED CTR
100
1.5
1.4
1.3
T
A
= 25°C
1.0
0.8
0.6
0.4
T
A
= -55°C
1.2
1.1
1.0
1
10
T
A
= 100°C
0.2
0.0
0
2
4
6
8
10
12
14
16
18
20
I
F
– LED FORWARD CURRENT (mA)
I
F
– FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.0
Fig. 4 CTR vs. RBE (Unsaturated)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
CE
= 5.0V
I
F
= 20mA
I
F
= 10mA
I
F
= 5mA
1.2
I
F
= 5mA
NORMALIZED CTR
1.0
I
F
= 10mA
0.8
0.6
I
F
= 20mA
0.4
Normalized to
I
F
= 10mA
T
A
= 25°C
0.2
-60
-40
-20
0
20
40
60
80
100
10
100
1000
R
BE
– BASE RESISTANCE (kΩ)
T
A –
AMBIENT TEMPERATURE (°C)
1.0
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 5 CTR vs. RBE (Saturated)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
100
0.9
I
F
= 20mA
V
CE
= 0.3 V
I
F
= 5mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
100
1000
I
F
= 10mA
T
A
= 25˚C
10
1
I
F
= 2.5mA
0.1
0.01
I
F
= 5mA
I
F
= 10mA
I
F
= 20mA
R
BE
- BASE RESISTANCE (kΩ)
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
www.fairchildsemi.com
5
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