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MT4VDDT3264HG-40BF2

Description
module ddr 256mb 200-sodimm
Categorystorage   
File Size376KB,13 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Download Datasheet View All

MT4VDDT3264HG-40BF2 Overview

module ddr 256mb 200-sodimm

128MB, 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Features
DDR SDRAM SODIMM
MT4VDDT1664H – 128MB
MT4VDDT3264H – 256MB
For component data sheets, refer to Micron’s Web site:
www.micron.com
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 64) or 256MB (32 Meg x 64)
• Vdd = Vddq = +2.5V (-40B: Vdd = Vddq = +2.6V)
• Vddspd = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
2n-prefetch
architecture
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Gold edge contacts
Figure 1:
200-Pin SODIMM (MO-224)
PCB height: 31.75mm (1.25in)
Options
• Operating temperature
Commercial (0°C
T
A
+70°C)
Industrial (–40°C
T
A
+85°C)
• Package
200-pin DIMM (standard)
200-pin DIMM (Pb-free)
• Memory clock, speed, CAS latency
5ns (200 MHz), 400 MT/s, CL = 3
6ns (167 MHz), 333 MT/s, CL = 2.5
7.5ns (133 MHz), 266 MT/s, CL = 2
2
7.5ns (133 MHz), 266 MT/s, CL = 2.5
2
1
Marking
None
I
G
Y
-40B
-335
-26A
-265
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. Not recommended for new designs.
Table 1:
Speed
Grade
-40B
-335
-26A
-265
Key Timing Parameters
Data Rate (MT/s)
Industry
Nomenclature
PC3200
PC2700
PC2100
PC2100
Notes:
CL = 3
400
CL = 2.5
333
333
266
266
CL = 2
266
266
266
200
t
RCD
t
RP
t
RC
(ns)
15
18
20
20
(ns)
15
18
20
20
(ns)
55
60
65
65
Notes
1
1. The values of
t
RCD and
t
RP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
PDF: 09005aef837131bb/Source: 09005aef8086ea0b
dd4c16_32x64h.fm - Rev. E 10/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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