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GT40M101

Description
N channel igbt (high power switching applications)
CategoryDiscrete semiconductor    The transistor   
File Size226KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

GT40M101 Overview

N channel igbt (high power switching applications)

GT40M101 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresHIGH SPEED
Maximum collector current (IC)40 A
Collector-emitter maximum voltage900 V
ConfigurationSINGLE
Maximum landing time (tf)400 ns
Gate emitter threshold voltage maximum6 V
Gate-emitter maximum voltage25 V
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment90 W
Maximum power dissipation(Abs)90 W
Certification statusNot Qualified
Maximum rise time (tr)600 ns
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
VCEsat-Max3.7 V
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