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PMN23UN,165

Description
mosfet N-CH 20v 6.3A 6tsop
CategoryDiscrete semiconductor    The transistor   
File Size90KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMN23UN,165 Overview

mosfet N-CH 20v 6.3A 6tsop

PMN23UN,165 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTSOP
package instructionPLASTIC, TSOP-6
Contacts6
Manufacturer packaging codeSOT457
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFAST SWITCHING, LOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)6.3 A
Maximum drain current (ID)6.3 A
Maximum drain-source on-resistance0.0344 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.75 W
Maximum pulsed drain current (IDM)25.2 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PMN23UN
µTrenchMOS™
ultra low level FET
M3D302
Rev. 01 — 16 June 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
TrenchMOS™ technology
s
Very fast switching
s
Low threshold voltage
s
Surface mounted package.
1.3 Applications
s
Battery powered motor control
s
High-speed switch in set top box
power supplies
s
Load switch in notebook computers
s
Driver FET in DC-to-DC converters.
1.4 Quick reference data
s
V
DS
20 V
s
P
tot
1.75 W
s
I
D
6.3 A
s
R
DSon
28 mΩ.
2. Pinning information
Table 1:
Pin
1,2,5,6
3
4
Pinning - SOT457 (TSOP6), simplified outline and symbol
Description
drain (d)
gate (g)
source (s)
6
5
4
Simplified outline
Symbol
d
g
mbb076
1
Top view
2
3
MBK092
s
SOT457 (TSOP6)

PMN23UN,165 Related Products

PMN23UN,165 PMN23UN,135 PMN23UN
Description mosfet N-CH 20v 6.3A 6tsop mosfet N-CH 20v 6.3A 6tsop TRANSISTOR 6.3 A, 20 V, 0.0344 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6, FET General Purpose Power
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
Parts packaging code TSOP TSOP TSOP
package instruction PLASTIC, TSOP-6 PLASTIC, TSOP-6 PLASTIC, TSOP-6
Contacts 6 6 6
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features FAST SWITCHING, LOW THRESHOLD FAST SWITCHING, LOW THRESHOLD FAST SWITCHING, LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V 20 V
Maximum drain current (Abs) (ID) 6.3 A 6.3 A 6.3 A
Maximum drain current (ID) 6.3 A 6.3 A 6.3 A
Maximum drain-source on-resistance 0.0344 Ω 0.0344 Ω 0.0344 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 6 6 6
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1.75 W 1.75 W 1.75 W
Maximum pulsed drain current (IDM) 25.2 A 25.2 A 25.2 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Brand Name NXP Semiconductor NXP Semiconductor -
Manufacturer packaging code SOT457 SOT457 -
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