Ordering number:ENN6348
P-Channel Silicon MOSFET
CPH6306
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm
2151A
[CPH6306]
0.2
0.05
2.9
6
5
4
0.15
0.6
1
2
3
0.95
0.6
1.6
2.8
0.4
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW
≤
10µs, duty cycle
≤
1%
Mounted on a ceramic board (900mm
×0.8mm)
2
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Conditions
0.7
0.9
0.2
Ratings
–60
±20
–1.8
–7.2
1.6
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=–1mA, VGS=0
VDS=–60V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–1A
ID=–1A, VGS=–10V
ID=–0.8A, VGS=–4V
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
–1.0
1.6
2.3
300
400
270
70
20
400
560
Conditions
Ratings
min
–60
–10
±10
–2.4
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
Marking : JG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2310 No.6348-1/4
CPH6306
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–1.8A
VDS=–10V, VGS=–10V, ID=–1.8A
VDS=–10V, VGS=–10V, ID=–1.8A
IS=–1.8A, VGS=0
Ratings
min
typ
9
7
38
16
9.8
1.4
1.7
–0.82
–1.2
max
Unit
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VDD=--30V
0V
--10V
VIN
VIN
ID=--1A
RL=30Ω
PW=10µs
D.C.≤1%
D
G
VOUT
P.G
50Ω
S
CPH6306
--2.0
--1.8
ID -- VDS
--5
.
--4
0V
.0V
--4.0
ID -- VGS
Ta=
--
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--3.5
--1.6
Drain Current, I
D
– A
.0V
--10
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--2.5
--2.0
--1.5
--1.0
--0.5
0
--3.0V
VGS=--2.5V
--0.2
--0.4 --0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
75
°
--4.0
Drain-to-Source Voltage, V
DS
– V
1000
IT01223
1000
Gate-to-Source Voltage, V
GS
– V
IT01224
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source
On-State Resistance, R
DS(on)
– mΩ
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, R
DS (on)
– mΩ
900
800
700
600
500
400
300
200
100
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
900
800
700
600
500
400
300
200
100
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
--1.0A
ID=--0.8A
8
--0.
I D=
A,
=--4
GS
V
V
--1.0
I D=
A
=--1
VGS
,
0V
Gate-to-Source Voltage, V
GS
– V
IT01225
Ambient Temperature, Ta – ˚C
IT01226
No.6348-2/4
C
--1.4
.5V
--3
Drain Current, I
D
– A
--6.0V
--3.0
25
°
C
--8.0V
25
°
C
VDS=--10V
CPH6306
10
y
fs -- ID
VDS=--10V
Forward Transfer Admittance, | yfs | – S
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
--0.001 2 3
5 7--0.01 2 3
5 7--0.1
2 3
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
IF -- VSD
VGS = 0
C
5
°
--2
=
°
C
Ta
75
°
C
25
Forward Current, I
F
– A
Ta=7
5
°
C
0
--0.1
--0.2
--0.3
--0.4
--0.5
5 7--1.0 2 3
5 7 --10
IT01227
1000
--0.6
--0.7
--25
°
C
--0.8
--0.9
25
°
C
--1.0
Drain Current, I
D
– A
100
7
Diode Forward Voltage, V
SD
– V
IT01228
SW Time -- ID
td(off)
VDD=--30V
VGS=--10V
Ciss, Coss, Crss – pF
Ciss, Coss, Crss -- VDS
f=1MHz
7
5
3
2
Switching Time, SW Time – ns
5
3
2
Ciss
tf
td(on)
10
7
5
3
2
100
7
5
3
2
Coss
tr
Crss
1.0
--0.1
10
2
3
5
7
--1.0
2
3
5
7
--10
0
--10
--20
--30
--40
--50
--60
IT01230
Drain Current, I
D
– A
--10
--9
IT01229
2
--10
7
5
Drain-to-Source Voltage, V
DS
– V
VGS -- Qg
VDS=--10V
ID=--1.8A
Drain Current, I
D
– A
ASO
IDP=--7.2A
ID=--1.8A
10µs
Gate-to-Source Voltage, V
GS
– V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
7
8
9
10
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
10
0
1m
µ
s
s
10
Operation in
this area is
limited by RDS(on).
DC
10
0m
s
op
era
tio
n
ms
--0.01
--0.1
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
×0.8mm)
2
3
5
7 --1.0
2
3
5 7 --10
2
3
Total Gate Charge, Qg – nC
2.0
IT01231
Drain-to-Source Voltage, V
DS
– V
5 7 --100
IT01232
PD -- Ta
Allowable Power Dissipation, P
D
– W
1.6
1.5
M
ou
nt
ed
on
a
1.0
ce
ra
m
ic
bo
a
rd
(9
0.5
00
m
m
2
×
0
.8m
m
)
160
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta – ˚C
IT01233
No.6348-3/4
CPH6306
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6348-4/4
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EEWORLD
