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2N5678

Description
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size72KB,1 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal, 3 Pin

2N5678 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid4016596144
Reach Compliance Codecompliant
Country Of OriginUSA
YTEOL4.99
Maximum collector current (IC)10 A
Collector-emitter maximum voltage100 V
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-63
JESD-30 codeO-MUPM-D3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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