2N5582
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N5582J)
•
JANTX level (2N5582JX)
•
JANTXV level (2N5582JV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
General purpose switching
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/423
Benefits
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
I
C
P
T
P
T
T
J
T
STG
Rating
50
75
800
500
2.86
2
11.43
-55 to+200
-55 to+200
Unit
Volts
Volts
mA
mW
mW/°C
W
mW/°C
°C
°C
Copyright 20
10
Rev. D
Semicoa
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5582
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 1 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
T
A
= -55°C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CBO3
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 75 Volts
V
CB
= 60 Volts
V
CB
= 60 Volts, T
A
= 150°C
V
EB
= 6 Volts
V
EB
= 4 Volts
Min
50
10
10
10
10
10
Typ
Max
Units
Volts
µA
nA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
50
75
100
100
30
35
Typ
Max
Units
300
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Parameter
Saturated Turn-On Time
Saturated Turn-Off Time
1.2
2.0
0.3
1.0
Volts
Volts
Symbol
|h
FE
|
h
FE
C
OBO
C
IBO
Test Conditions
V
CE
= 20 Volts, I
C
= 50 mA,
f = 100 MHz
V
CE
= 10 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Min
2.5
50
Typ
Max
Units
8
25
pF
pF
Symbol
t
ON
t
OFF
Test Conditions
Min
Typ
Max
35
300
Units
ns
ns
Copyright 20
10
Rev. D
Semicoa
Corporation
.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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