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K4S643234E-TN60

Description
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Categorystorage    storage   
File Size1MB,44 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K4S643234E-TN60 Overview

Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

K4S643234E-TN60 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSSOP86,.46,20
Contacts86
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G86
JESD-609 codee0
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals86
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize2MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP86,.46,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.375 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
K4S643234E-TE/N
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks
Synchronous DRAM
LVTTL
Extended Low Power (2.5V)
Revision 1.0
January 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.0 (Jan. 2001)

K4S643234E-TN60 Related Products

K4S643234E-TN60 K4S643234E-TN70
Description Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Is it Rohs certified? incompatible incompatible
Maker SAMSUNG SAMSUNG
Parts packaging code TSOP2 TSOP2
package instruction TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20
Contacts 86 86
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.5 ns 5.5 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 166 MHz 143 MHz
I/O type COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G86 R-PDSO-G86
JESD-609 code e0 e0
length 22.22 mm 22.22 mm
memory density 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 32 32
Number of functions 1 1
Number of ports 1 1
Number of terminals 86 86
word count 2097152 words 2097152 words
character code 2000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C
organize 2MX32 2MX32
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2
Encapsulate equivalent code TSSOP86,.46,20 TSSOP86,.46,20
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
power supply 2.5 V 2.5 V
Certification status Not Qualified Not Qualified
refresh cycle 4096 4096
Maximum seat height 1.2 mm 1.2 mm
self refresh YES YES
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.002 A 0.002 A
Maximum slew rate 0.17 mA 0.16 mA
Maximum supply voltage (Vsup) 2.7 V 2.7 V
Minimum supply voltage (Vsup) 2.375 V 2.375 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V
surface mount YES YES
technology CMOS CMOS
Temperature level OTHER OTHER
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal pitch 0.5 mm 0.5 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
width 10.16 mm 10.16 mm
Base Number Matches 1 1
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