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KBU605GT0

Description
Bridge Rectifier Diode, 1 Phase, 6A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size201KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

KBU605GT0 Overview

Bridge Rectifier Diode, 1 Phase, 6A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN

KBU605GT0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PSFM-W4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage600 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-W4
Maximum non-repetitive peak forward current175 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
KBU601G thru KBU607G
Taiwan Semiconductor
CREAT BY ART
Glass Passivated Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength
- Typical IR less than 0.1μA
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
KBU
MECHANICAL DATA
Case:
KBU
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Mounting torque:
5 in lbs max.
Weight:
7.2 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 3 A
I
F
= 6 A
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance per leg
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Measured at 1MHz and applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
KBU
601G
50
35
50
KBU
602G
100
70
100
KBU
603G
200
140
200
KBU
604G
400
280
400
6
175
127
1.0
1.1
5
500
400
3.1
8.6
- 55 to +150
- 55 to +150
O
KBU
605G
600
420
600
KBU
606G
800
560
800
KBU
607G
1000
700
1000
Unit
V
V
V
A
A
A
2
s
V
I
R
Cj
R
θJC
R
θJA
T
J
T
STG
μA
pF
C/W
O
O
C
C
Document Number: DS_D1310035
Version: G13

KBU605GT0 Related Products

KBU605GT0 KBU601GT0G KBU603GT0G KBU602GT0G KBU606GT0 KBU606GT0G
Description Bridge Rectifier Diode, 1 Phase, 6A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 50V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 100V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN Bridge Rectifier Diode, 1 Phase, 6A, 800V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN
package instruction R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 600 V 50 V 200 V 100 V 800 V 800 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4 R-PSFM-W4
Maximum non-repetitive peak forward current 175 A 175 A 175 A 175 A 175 A 175 A
Number of components 4 4 4 4 4 4
Phase 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 6 A 6 A 6 A 6 A 6 A 6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 600 V 50 V 200 V 100 V 800 V 800 V
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
Base Number Matches 1 1 1 1 1 -
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