SENSITRON
SEMICONDUCTOR
Data sheet 1425, Rev.
A
Features
KBPC1000S-G – KBPC1010S-G
10A IN-LINE BRIDGE RECTIFIER
Green Products
Diffused
Junction
Low
Forward
Drop
Voltage
High
Current Capability
A
KBPC-S
High
Reliability
Dim Min
Max Min
Max
High
Surge
Current
Capability
A
28.40 28.70 1.12
1.13
Ideal
Printed
Circuit
for
Boards
B
10.97 11.23 0.432 0.442
Designed for Saving Mounting Space
C
~
!"
$
%&'223064
-
~
+
13.90
—
0.547
—
D
19.10
— 0.752
—
Green
Products
the
RoHS
Directive
in Compliance with
Data
C
Mechanical
D
EE
Case:
Epoxy Case
with Heat Sink Internally
Mounted in the Bridge Encapsulation
Terminals:
Plated Leads Solderable per
Method 208
MIL-STD-202,
Polarity:
As
Marked
on
Body
Weight:
30
grams
(approx.)
Mounting
Position: Any
Marking:
Type
Number
E
5.10
— 0.201
—
G
1.20
Ø
Typical 0.047 ØTypical
H
3.05 0.120 3.60
0.142
In mm
In inch
METAL HEATSINK
G
B
H
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
capacitive load, derate current by 20%.
For
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
A
= 50°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
R
I
2
t
R
θJC
V
ISO
T
j,
T
STG
KBPC KBPC KBPC KBPC KBPC KBPC KBPC
1000S-G 1001S-G 1002S-G 1004S-G 1006S-G 1008S-G 1010S-G
50
35
100
70
200
140
400
280
10
200
1.2
10
1.0
374
2.0
2500
-55 to +150
600
420
800
560
1000
700
Unit
V
V
A
A
V
µA
mA
A
2
s
K/W
V
°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage (per element)
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 5.0A
@T
A
= 25°C
@T
A
= 100°C
Rating for Fusing (t < 8.3ms) (Note 1)
Typical Thermal Resistance (Note 2)
RMS Isolation Voltage from Case to Lead
Operating and Storage Temperature Range
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.
2. Thermal resistance junction to case per element mounted on 8" x 8" x 25" thick AL plate.
!!"#$•
•
%
&
'(&)*+,,---. &
./0•12&%#
%3 &
./0•
20
I
F
, AVERAGE FORWARD CURRENT (A)
Green Products
Mounted on a
220 x 220 x 50 mm
AL plate heatsink
S-G S-G
15
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
10
10
1.0
5
0.1
Resistive or
Inductive load
T
j
= 25°C
Pulse Width = 300µs
0
0.01
0
0.2
0.4 0.6
0.8
1.0
1.2
1.4
1.6 1.8
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward. Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
I
FSM
, PEAK FWD. SURGE CURRENT (A)
400
Single Half-Sine Wave
(JEDEC Method)
1000
f = 1 Mhz
T
j
= 25°C
300
C
j
, CAPACITANCE (pF)
T
j
= 150°C
200
100
100
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
100
T
j
= 125°C
100
10
0.1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance (per element)
1.0
10
1.0
0.1
T
j
= 25°C
0.01
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics (per element)
•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
SEMICONDUCTOR
Green Products
S-G S-G
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
•
•
•
•
•
!!"#$•
•
%
&
'(&)*+,,---. &
./0•12&%#
%3 &
./0•