3PMT5.0 thru 3PMT170
POWERMITE
1500 Watt Transient Absorption Zener
®
SCOTTSDALE DIVISION
DESCRIPTION
These 1500 watt transient voltage suppressors offer power-handling capabilities only
found in larger packages. They are most often used for protecting against transients
from inductive switching environments or induced secondary lightning effects as
found in lower surge levels of IEC61000-4-5. With very fast response times, they are
also effective in protection from ESD or EFT. Powermite
®
package features include a
full metallic bottom that eliminates the possibility of solder-flux entrapm ent during
assembly. They also provide unique locking tab acting as an integral heat sink. With
its very short terminations, parasitic inductance is minimized to reduce voltage
overshoots during fast-rise-time transients
.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
POWERMITE
®
WWW.
Microsemi
.
COM
FEATURES
•
•
•
•
•
•
Very low profile surface mount package (1.1mm)
Integral heat sink-locking tabs
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
Available in both unidirectional or bi-directional
(C suffix for bi-directional)
•
•
•
•
APPLICATIONS / BENEF ITS
Secondary lightning transient protection
Inductive switching transient protection
Small footprint
Very low parasitic inductance for minimal
voltage overshoot
•
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively and
IEC61000-4-5 for surge levels defined herein
MAXIMUM RATINGS
•
•
•
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000 µsec.)
Forward Surge Current: 200 Amps (8.3 ms)
(excluding bidirectional)
Repetition surge rate (duty factor): 0.01%
Lead and mounting temperature: 260°C for 10 sec
MECHANICAL AND PACKAGING
•
•
•
•
•
•
Terminals tin-lead plated
Two-lead side internally connected together
Cathode designated with band (unidirectional)
Molded epoxy package meets UL94V-0
Weight: 0.072 grams (approximate)
Thermal resistance: 2.5°C / watt junction to tab
130°C / watt junction to ambient with
recommended footprint
•
Tape & Reel packaging per EIA-481-2
(16 mm - 6000 units/reel)
P E A K P U L S E P O W E R R A TI N G S
P
pp
– Peak Pulse Power – kW
Peak Pulse Power (P
pp
) or Current (I
pp
)
in percent of 25º C rating
100
100
75
50
25
0
0
50 100 150 200
10
3PMT
1.0
.10
100ns
1µs
10µs
100µs
1ms
10ms
t
d
– Pulse Time – sec
Copyright
©
2001
MSCXXXX.PDF 09-09 2002 REV 0
T – Temperature – ºC
Page 1
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
3PMT5.0 thru 3PMT170
POWERMITE
1500 Watt Transient Absorption Zener
®
SCOTTSDALE DIVISION
DEFINITIONS
Symbol
V
RWM
V
BR
V
C
I
D
DEFINITION
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Minimum Clamping Voltage: The maximum voltage the device will exhibit at the peak pulse current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
10000
WWW.
Microsemi
.
COM
Measured at Zero Bias
Ipp -- Peak Pulse Current -- % Ipp
100
Peak Value -- Ipp
10
/
1000 Waveform
Capacitance in picofarads
1000
50
Half -Value -- Ipp
2
100
Measured at Stand - off Voltage
10
1
V
BR
:
0
0
t
r
500
t
1000
1500
10
100
1000
Breakdown Voltage in volts
d
t -- Time in microseconds
figure 1
OUTLINE AND PAD LAYOUT
figure 2
A
INCHES
NOMINAL
0.070
0.173
0.200
0.035
0.160
0.072
0.056
0.044
0.190
0.210
0.038
0.034
0.030
0.030
MILLIMETERS
NOMINAL
1.778
4.392
5.080
0.889
4.064
1.829
1.422
1.118
4.826
5.344
0.965
0.864
0.762
0.762
J
P
N
K
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
B
C
D
L
M
Mounting Pad
3PMT
E
G
H
F
Copyright
©
2001
MSCXXXX.PDF 09-09 2002 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Embedded System
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