UNISONIC TECHNOLOGIES CO., LTD
HE8050
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
The UTC HE8050 is a low voltage high current small signal NPN
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
1
NPN EPITAXIAL SILICON TRANSISTOR
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8550
TO-92NL
*Pb-free plating product number: HE8050L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
HE8050-x-T9N-A-B
HE8050L-x-T9N-A-B
HE8050-x-T9N-A-K
HE8050L-x-T9N-A-K
Note: x: Rank, refer to Classification of h
FE
.
Package
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
HE8050L-x-T9N-A-B
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) B: Tape Box, K: Bulk
(2) refer to Pin Assignment
(3) T9N: TO-92NL
(4) x: refer to Classification of h
FE
(5) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R211-018,A
HE8050
PARAMETER
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
6
V
Collector Dissipation(Ta=25°C)
P
D
1
W
Collector Current
I
C
1.5
A
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
BE(SAT)
V
BE
f
T
Cob
TEST CONDITIONS
I
C
=100µA,I
E
=0
I
C
=2mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=35V,I
E
=0
V
EB
=6V,I
C
=0
V
CE
=1V,I
C
=5mA
V
CE
=1V,I
C
=100mA
V
CE
=1V,I
C
=800mA
I
C
=800mA,I
B
=80mA
I
C
=800mA,I
B
=80mA
V
CE
=1V,I
C
=10mA
V
CE
=10V,I
C
=50mA
V
CB
=10V,I
E
=0
f=1MHz
MIN
40
25
6
TYP
MAX UNIT
V
V
V
100
nA
100
nA
500
0.5
1.2
1.0
100
9.0
V
V
V
MHz
pF
45
85
40
135
160
110
CLASSIFICATION of h
FE
RANK
RANGE
C
120-200
D
160-300
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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HE8050
TYPICAL CHARACTERISTICS
Static Characteristics
0.5
NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain
10
3
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
Collector Current, Ic (mA)
V
CE
=1V
DC current Gain, h
FE
2.0
0.4
2
10
0.3
I
B
=1.5mA
0.2
I
B
=1.0mA
I
B
=0.5mA
1
10
0.1
0
0
0.4
0.8
1.2
1.6
10
0
-1
10
10
0
1
10
10
2
10
3
Collector-Emitter Voltage ( V)
Collector Current Ic (mA)
,
Base-Emitter on Voltage
10
3
10
4
Saturation Voltage
Ic=10*I
B
Collector Current, Ic (mA)
Saturation Voltage (mV)
V
CE
=1V
10
2
V
BE(SAT)
10
3
10
1
10
2
V
CE(SAT )
1
-1
10
10
0
1
10
10
2
3
10
0
10
0.2
0.4
0.6
0.8
1.0
1.2
10
Base-Emitter Voltage (V)
Collector Current, Ic (mA)
Current Gain -Bandwidth
Product
Current Gain-Bandwidth Product, f
T
(MHz)
3
10
10
3
Collector Output Capacitance
V
CE
=10V
2
10
Capacitance, Cob (pF)
10
2
f=1MHz
I
E
=0
1
10
10
1
0
10
0
10
1
10
2
10
3
10
10
0
0
10
1
10
2
10
3
10
Collector Current, Ic (mA)
Collector-Base Voltage (V)
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UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
HE8050
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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