Transys
Electronics
L I M I T E D
SOT-523 Plastic-Encapsulated Diode
DAP222
FEATURES:
Power dissipation
P
D
:
150
mW (Tamb=25℃)
SWITCHING DIODE
SOT-523
Collector current
100 mA
I
F
:
Collector-base voltage
80
V
V
R
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
CIRCUIT:
1
3
2
MARKING: P
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
unless otherwise specified)
Test
conditions
MIN
80
0.1
1.2
3.5
4
MAX
UNIT
V
I
R
= 100
µ
A
V
R
=70V
I
F
=100mA
V
R
=6V, f=1MHz
V
R
=6V, I
F
=5mA
µA
V
pF
ns
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